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參數(shù)資料
| 型號(hào)： | RLP1N06CLE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 1.5 A, 55 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | RLP1N06CLE |
6-430
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. NORMALIZED CURRENT LIMIT vs CASE
TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
2.0
1.5
1.0
0.5
0
-50
-25
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
N
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
= 10V, V
GS
= 5V
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
0.1
I
D
,
OPERATION IN THIS AREA
LIMITED BY I
DS(LIM)
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
T
J
= MAX RATED
T
C
= 25
o
C
100
μ
s
1ms
10ms
DC
V
DSS
MAX = 55V
2.5
2.0
1.5
1.0
0.5
0
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
,
V
GS
= 4V
V
GS
= 3V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
3.0
2.5
2.0
1.5
1.0
0.5
00
1
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
>> I
DS
x r
DS(ON)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
25
o
C
150
o
C
-25
o
C
3.0
2.5
2.0
1.5
1.0
0.5
050
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= 5V, I
D
= 0.5A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
O
RLP1N06CLE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RLP1N06CLER4390 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RLP1N08LE | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET |
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