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參數資料
| 型號： | RLP1N06CLE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,電壓箝位,電流限定,N溝道功率MOS場效應管) |
| 中文描述： | 1.5 A, 55 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 2/7頁 |
| 文件大小： | 47K |
| 代理商： | RLP1N06CLE |
6-429
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RLP1N06CLE
55
55
2
Self Limited
5.5
36
0.24
-55 to 175
UNITS
V
V
kV
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
, Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Electrostatic Voltage at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed) . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Power Dissipation Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
V
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 20mA, V
GS
= 0V (Figure 7)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 8)
V
DS
= 45V, V
GS
= 0V
55
-
70
V
Gate to Threshold Voltage
1
-
2.5
V
Zero Gate Voltage Drain Current
TC = 25
o
C
TC = 150
o
C
TC = 25
o
C
T
C
= 150
o
C
TC = 25
o
C
T
C
= 150
o
C
TC = 25
o
C
T
C
= 150
o
C
-
-
5
μ
A
μ
A
μ
A
μ
A
-
-
20
Gate to Source Leakage Current
I
GSS
V
GS
= 5V
-
-
5
-
-
20
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 1A, V
GS
= 5V
(Figure 6)
-
-
0.750
-
-
1.500
Limiting Current
I
DS(LIM)
V
DS
= 15V, V
GS
= 5V
(Figure 2)
1.8
-
3
A
0.9
-
1.5
A
Turn-On Time
t
(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
t
(OFF)
R
θ
JC
R
θ
JA
ESD
V
DD
= 30V, I
D
= 1A, V
GS
= 5V, R
GS
= 25
R
L
= 30
-
-
6.5
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
Turn-On Delay Time
-
-
1.5
Rise Time
1
-
5
Turn-Off Delay Time
-
-
7.5
Fall Time
1
-
5
Turn-Off Time
-
-
12.5
Thermal Resistance Junction to Case
-
-
4.17
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
TO-220AA
-
-
62
Electrostatic Voltage
Human Model (100pF, 1.5k
)
MIL-STD-883B (Category B2)
2000
-
-
V
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 1A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 1A
-
-
1
ms
NOTES:
2. Pulsed: pulse duration = 80
μ
s maximum, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RLP1N06CLE
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