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參數(shù)資料
| 型號(hào)： | PSMN010-55D |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel logic level TrenchMOS transistor(N溝道邏輯電平 TrenchMOS晶體管) |
| 中文描述： | 75 A, 55 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大小： | 98K |
| 代理商： | PSMN010-55D |
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN010-55D
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1999
9
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PSMN010-55D /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN010-55D,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN010-80YLX | 功能描述:MOSFET N-CH 80V LFPAK56 制造商:nexperia usa inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:80V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:84A（Tc） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:5V，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:2.1V @ 1mA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:44.2nC @ 5V Vgs（最大值）:±20V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:6506pF @ 25V FET 功能:- 功率耗散（最大值）:194W（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:10 毫歐 @ 25A，10V 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:LFPAK56，Power-SO8 封裝/外殼:SC-100，SOT-669 標(biāo)準(zhǔn)包裝:1 |
| PSMN011-30YL,115 | 功能描述:MOSFET N-Ch 30V Trench MOS logic level FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN011-30YLC | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 37A LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 37A, LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 37A, LFPAK, Transistor Polarity:N Channel, Continuous Drain C |
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