參數(shù)資料
型號(hào): PSMN010-55D
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: N-channel logic level TrenchMOS transistor(N溝道邏輯電平 TrenchMOS晶體管)
中文描述: 75 A, 55 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: DPAK-3
文件頁(yè)數(shù): 5/9頁(yè)
文件大小: 98K
代理商: PSMN010-55D
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN010-55D
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Fig.8. Typical transconductance, T
j
= 25 C
g
fs
= f(I
D
)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)
/R
DS(ON)25 C
= f(T
j
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
5
10
15
20
25
30
35
40
45
50
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
Gate-source voltage, VGS (V)
2
2.2 2.4 2.6 2.8
3
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
175 C
Threshold Voltage, VGS(TO) (V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
Junction Temperature, Tj (C)
typical
maximum
minimum
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
0
5
10
15
20
25
30
35
40
45
50
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
175 C
VDS > ID X RDS(ON)
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
Gate-source voltage, VGS (V)
minimum
typical
maximum
Normalised On-state Resistance
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-60
-40
-20
0
Junction temperature, Tj (C)
20
40
60
80
100 120 140 160 180
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
October 1999
5
Rev 1.200
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