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參數(shù)資料
| 型號： | PNZ3112 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN Photodiode |
| 中文描述： | PIN PHOTO DIODE |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 44K |
| 代理商： | PNZ3112 |
1
PNZ3112
PIN Photodiode
For optical control systems
PIN Photodiodes
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
30
–25 to +85
–30 to +100
Unit
V
mW
C
C
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
D
I
L
λ
P
t
r
, t
f*2
C
t
R
S*3
a
*4
Conditions
min
typ
max
2
Unit
nA
μ
A
nm
μ
s
pF
k
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Resistance between electrodes
Gradient of position signal
V
R
= 1V
V
R
= 1V, L = 1000 lx
*1
V
R
= 1V
V
R
= 1V, R
L
= 1k
V
R
= 1V, f = 1MHz
V
R
= 1V, V
a
= 0.5V
V
R
= 1V
16
20
940
10
10
120
0.08
*1
I
L
= I
1
+ I
2
Note: I
1
and I
2
are the photoelectric currents of anodes A1 and A2.
White tungsten lamp light source (color temperature T = 2856K)
*2
GaAs light emitting diode light source (
λ
= 800nm)
*3
V
a
is the potential difference between anodes A1 and A2.
*4
a = | (I
1
–I
2
)/(I
1
+I
2
) |
Note :Incident light is at the position 100
μ
m from the reference position.
The reference position is the position where I
1
= I
2.
Dimensions of detection area
1: Anode A1
2: Common cathode
3: Anode A2
4: Common cathode
Unit : mm
1.8
±
0.3
10
5
10
5
5
5
1
2
4
3
1
±
1
4
±
0
1
±
0
1
±
0
1
±
0
1
±
0
4-0.6
+0.1
–0.2
–0.05
4-0.5
±
0.15
5.0
±
0.1
2.54
±
0.1
0.8
±
0.2
0.6
±
0.1
0.2
1
2.5
3.0
1
Unit : mm
Features
High sensitivity and low dark current
For one-dimensional light-point position detection
Good positional linearity
Small plastic package
Adoption of visible light cutoff resin
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相關代理商/技術參數(shù) |
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|---|---|
| PNZ312D | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Dual Division Silicon PIN Photodiode |
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| PNZ313B | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:PIN Photodiode |
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