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參數(shù)資料
| 型號： | PNZ313 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN Photodiode |
| 中文描述： | PIN PHOTO DIODE |
| 封裝： | ROHS COMPLIANT, LSTFR102NC-001, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 44K |
| 代理商： | PNZ313 |
1
PNZ313B
PIN Photodiode
For optical control systems
PIN Photodiodes
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
D
I
L
λ
P
t
r
, t
f*2
t
r
, t
f*2
C
t
θ
Conditions
min
typ
5
25
960
50
5
70
65
max
50
Unit
nA
μ
A
nm
ns
μ
s
pF
deg.
Dark current
Photo current
Peak sensitivity wavelength
Response time
Response time
Capacitance between pins
Acceptance half angle
V
R
= 10V
V
R
= 10V, L = 1000 lx
*1
V
R
= 10V
V
R
= 10V, R
L
= 1k
V
R
= 10V, R
L
= 100k
V
R
= 0V, f = 1MHz
Measured from the optical axis to the half power point
15
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
50
λ
P
= 800nm
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
Sig.IN
R
L
V
R
= 10V
Sig.OUT
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
1: Cathode
2: Anode
Unit : mm
1
5.08
±
0.25
2
8
±
0
1
5
2
±
0
2
±
0
2-1.2
±
0.15
2-0.6
±
0.15
0.41
±
0.15
7.0
±
0.5
Anode mark 1.6
Device
center
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
100
–30 to +85
–
40 to +100
Unit
V
mW
C
C
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Features
Fast response which is well suited to high speed modulated light
detection : t
r
, t
f
= 50 ns (typ.)
High sensitivity, high reliability
Peak sensitivity wavelength matched with infrared light emitting
diodes :
λ
P
= 960 nm (typ.)
Wide detection area, wide acceptance half angle :
θ
= 65 deg. (typ.)
Adoption of visible light cutoff resin
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PNZ313(PN313) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Opto-Electronic Device - Photo Detectors - PIN Photodiodes |
| PNZ313B | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:PIN Photodiode |
| PNZ313B(PN313B) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Opto-Electronic Device - Photo Detectors - PIN Photodiodes |
| PNZ322D(PN322D) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNZ322D (PN322D) - Dual Division Silicon PIN Photodiode |
| PNZ323 | 功能描述:PIN PHOTO DIODE 900NM 70DEG SIDE RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 光電檢測器 - 光電二極管 系列:- 標準包裝:1 系列:- 波長:850nm 顏色 - 增強型:- 光譜范圍:400nm ~ 1100nm 二極管類型:引腳 nm 下響應(yīng)率:0.62 A/W @ 850nm 響應(yīng)時間:5ns 電壓 - (Vr)（最大）:50V 電流 - 暗（標準）:1nA 有效面積:1mm² 視角:150° 工作溫度:-40°C ~ 100°C 封裝/外殼:徑向，5mm 直徑（T 1 3/4） 其它名稱:475-2649-6 |
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