參數(shù)資料
型號: PNZ323B
廠商: PANASONIC CORP
元件分類: 光敏二極管
英文描述: PIN Photodiode
中文描述: PIN PHOTO DIODE
封裝: ROHS COMPLIANT, LSRLR102NC-001, 2 PIN
文件頁數(shù): 1/2頁
文件大小: 46K
代理商: PNZ323B
1
PNZ323B
PIN Photodiode
For optical control systems
PIN Photodiodes
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
D
I
L
S
IR*2
λ
P
t
r
, t
f*3
t
r
, t
f*3
C
t
θ
Conditions
min
typ
5
31
4
970
50
5
70
70
max
50
Unit
nA
μ
A
μ
A
nm
ns
μ
s
pF
deg.
Dark current
Photo current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Response time
Response time
Capacitance between pins
Acceptance half angle
V
R
= 10V
V
R
= 10V, L = 1000 lx
*1
V
R
= 5V, H = 0.1mW/cm
2
V
R
= 10V
V
R
= 10V, R
L
= 1k
V
R
= 10V, R
L
= 100k
V
R
= 0V, f = 1MHz
Measured from the optical axis to the half power point
3.2
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Light source :
λ
= 940 nm
*3
Switching time measurement circuit
50
λ
P
= 800nm
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
Sig.IN
R
L
V
R
= 10V
Sig.OUT
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
1: Anode
2: Cathode
Unit : mm
2.3
Chip
4.6
±
0.2
N
0
1
(
7
±
0
5
±
0
6
±
0
3
±
1
1
±
0
2
±
1
(
0.5
1.32
2.54
1
2
3
±
0
(
0
±
0
2- 0.6
±
0.1
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
100
–30 to +85
40 to +100
Unit
V
mW
C
C
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Features
Fast response which is well suited to high speed modulated light
detection : t
r
, t
f
= 50 ns (typ.)
High sensitivity, high reliability
Peak sensitivity wavelength matched with infrared light emitting
diodes :
λ
P
= 970 nm (typ.)
Wide detection area, wide acceptance half angle :
θ
= 70 deg. (typ.)
Adoption of visible light cutoff resin
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