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參數(shù)資料
| 型號(hào)： | PNZ312D |
| 廠商： | PANASONIC CORP |
| 元件分類： | 光敏二極管 |
| 英文描述： | Dual Division Silicon PIN Photodiode |
| 中文描述： | PIN PHOTO DIODE |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 49K |
| 代理商： | PNZ312D |
1
PNZ312D
Dual Division Silicon PIN Photodiode
For optical information systems
PIN Photodiodes
Features
Fast response : t
r
, t
f
= 10 ns (typ.)
Good photo current linearity
Low dark current : I
D
= 20 nA (max.)
Small size plastic package (flat type)
Adoption of visible light cutoff resin
R
1
= R
2
R
1
R
2
+10V
Dimensions of detection area
Note) The PNZ312D package consists of a visible
light cutoff resin. Therefore the chips (A and B)
shown in the drawing cannot actually be seen.
1: Anode A
2: Common Cathode
3: Anode B
4: Common Cathode
Unit : mm
1.8
±
0.3
10
5
10
5
1
1
1
2
4
3
1
±
1
4
±
0
1
±
0
1
±
0
1
1.0
4-0.6
+0.1
0.2
+0.1
–0.05
4-0.5
±
0.1
1.0
±
0.2
0.6
5.0
±
0.1
2.54
±
0.1
A
B
Unit : mm
1.6
A
B
1
1
1.6
0.04
3.5
0
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
30
–25 to +85
–30 to +100
Unit
V
mW
C
C
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Applications
Auto focus sensor for still cameras and video cameras etc.
Distance measuring systems
Position sensor for automatic assembly lines
Eye sensor for industrial robots
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
V
R
I
D
I
L*3
λ
P
t
r
, t
f*2
C
t
θ
Conditions
min
30
typ
max
Unit
V
nA
μ
A
nm
ns
pF
deg.
Reverse voltage (DC)
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Acceptance half angle
I
R
= 10
μ
A
V
R
= 10V
V
R
= 10V, L = 1000 lx
*1
V
R
= 10V
V
R
= 10V, R
L
= 1k
V
R
= 10V, f = 1MHz
Measured from the optical axis to the half power point
20
8
12
940
10
5
65
Note) The indicated values for absolute maximum ratings and electro-optical characteristics are the values
corresponding to individual elements.
*1
Measurements were made using a white tungsten lamp (color temperature T = 2856K) as a light source.
*2
Semiconductor laser light source (
λ
= 800 nm )
*3
Photo current measurement circuit
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|---|---|
| PNZ313 | PIN Photodiode |
| PNZ313B | PIN Photodiode |
| PNZ323B | PIN Photodiode |
| PNZ323 | Silicon planar type |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PNZ312DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Opto-Electronic Device - Photo Detectors - PIN Photodiodes |
| PNZ313 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:PIN Photodiode |
| PNZ313(PN313) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Opto-Electronic Device - Photo Detectors - PIN Photodiodes |
| PNZ313B | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:PIN Photodiode |
| PNZ313B(PN313B) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Opto-Electronic Device - Photo Detectors - PIN Photodiodes |
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