參數(shù)資料
型號(hào): PHE83N03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS transistor
中文描述: 75 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, TO-220AB, I2PAK-3
文件頁數(shù): 8/15頁
文件大?。?/td> 308K
代理商: PHE83N03LT
Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 01 — 23 January 2001
8 of 15
9397 750 07815
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 30 A; V
DD
= 5 V, 10 V and 15 V
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ad91
0
15
30
45
60
75
0
0.3
0.6
0.9
1.2
V
SD
(V)
I
S
(A)
T
j
= 25 oC
175 oC
V
GS
= 0 V
03ad93
0
2
4
6
8
10
V
GS
(V)
0
20
40
60
80
Q
G
(nC)
I
D
= 30 A
T
j
= 25 oC
V
DD
= 5 V 10 V 15 V
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