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參數(shù)資料
| 型號(hào)： | PHB112N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 262K |
| 代理商： | PHB112N06T |
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 07 March 2001
8 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 50 A; V
DD
= 14 V and 44 V
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
100
90
80
70
60
50
40
30
20
10
0
IS
(A)
VSD (V)
0
0.2
1.0
1.2
0.4
0.6
0.8
Tj = 150 oC
Tj = 25 oC
003aaa082
0
2
4
6
8
10
0
20
40
60
80
100
(V)
VDD = 44 V
VDD = 14 V
ID = 50 A
VGS
QG (nC)
003aaa081
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| PHB112N06T,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB119NQ06T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET |
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| PHB119NQ06T,118 | 功能描述:MOSFET TRENCHMOS (TM)FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB11N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
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