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參數(shù)資料
| 型號： | PHB112N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 262K |
| 代理商： | PHB112N06T |
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 07 March 2001
2 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
Conditions
T
j
= 25 to 175
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
Typ
7.2
Max
55
75
200
175
8
Unit
V
A
W
°
C
m
T
j
= 25
°
C; V
GS
= 10 V; I
D
= 25 A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
T
j
= 25 to 175
°
C
T
j
= 25 to 175
°
C; R
GS
= 20 k
Min
Max
55
55
±
20
75
Unit
V
V
V
A
T
mb
= 25
°
C; V
GS
= 10 V
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V
Figure 2
and
3
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
52.5
A
I
DM
peak drain current
400
A
P
tot
T
stg
T
j
Source-drain diode
I
S
total power dissipation
storage temperature
operating junction temperature
55
55
200
175
175
W
°
C
°
C
source (diode forward) current
(DC)
peak source (diode forward)
current
Avalanche ruggedness
E
AS
non-repetitive avalanche energy
T
mb
= 25
°
C
75
A
I
SM
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
400
A
unclamped inductive load;
I
AS
= 60 A; t
p
= 0.1 ms; V
DD
≤
25 V;
R
GS
= 50
; V
GS
= 5 V; starting
T
j
= 25
°
C;
Figure 4
360
mJ
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