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參數(shù)資料
| 型號： | PHB112N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 262K |
| 代理商： | PHB112N06T |
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 07 March 2001
6 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 6.
T
j
= 25
°
C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
160
140
120
100
80
60
40
20
0
ID
(A)
0
2
4
6
8
VDS (V)
10
VGS = 4.5 V
5.0 V
5.5 V
6.0 V
6.5 V
7.0 V
8.0 V
10 V
18 V
003aaa071
Tj = 175 oC
Tj = 25 oC
1
0
2
3
4
5
6
7
VGS (V)
100
90
80
70
60
50
40
30
20
10
0
ID
(A)
003aaa074
25
23
21
19
17
15
13
11
9
7
5
5
25
45
65
85
105
125
6.0 V
6.5 V
VGS = 5.5 V
7.0 V
10.0 V
8.0 V
7.5 V
RDSon
(m
)
ID (A)
003aaa072
0
-40
-80
40
80
120
160
200
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tj (oC)
a
003aaa076
a
R
DSon 25 C
)
---------------------------
=
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| PHB119NQ06T,118 | 功能描述:MOSFET TRENCHMOS (TM)FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB11N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
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