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參數(shù)資料
| 型號： | PHB112N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 262K |
| 代理商： | PHB112N06T |
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 07 March 2001
7 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C; V
DS
=
25 V
Fig 12. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
0
1
2
3
4
5
0
40
80
120
160
Tj (oC)
200
-40
-80
max.
typ
min
VGS(th)
(V)
003aaa077
2%
typ
98%
10-1
10-2
10-3
10-4
10-5
10-6
0
1
2
3
4
5
ID
(A)
VGS(V)
003aaa078
60
50
40
30
20
10
0
100
80
60
40
20
0
ID (A)
gfs
(S)
003aaa075
Ciss,
Coss,
Crss
(nF)
7
6
5
4
3
2
1
0
10-2
10-1
1
10
102
VDS(V)
Ciss
Coss
Crss
003aaa079
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| PHB112N06T,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| PHB119NQ06T,118 | 功能描述:MOSFET TRENCHMOS (TM)FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB11N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
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