參數(shù)資料
型號(hào)： PHB112N06T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁(yè)數(shù)： 3/14頁(yè)
文件大?。?/td> 262K
代理商： PHB112N06T
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 07 March 2001
3 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
V
GS
≥
10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Unclamped inductive load; V
DD
≤
15 V; R
GS
= 50
;
V
GS
= 5 V; starting T
j
= 25
°
C and 150
°
C.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
03aa16
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
Tmb (oC)
200
Pder
(%)
03aa24
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Tmb (oC)
175
200
Ider
(%)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
RDSon = VDS / ID
DC
ID
(A)
103
102
10
1
1
10
102
VDS (V)
tp =
1
μ
s
tp
tp
T
T
P
t
δ
=
10
μ
s
100
μ
s
1 ms
10 ms
0.1 s
003aaa069
IAS
(A)
Tj prior to avalanche = 150 oC
25 oC
tp ms
10-3
10-2
10-1
1
10
1
10
102
003aaa080
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