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參數(shù)資料
| 型號： | PF48F4400P0VTQ0 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | OSC 5V SMT 7X5 CMOS |
| 中文描述： | 32M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 |
| 封裝： | 8 X 11 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88 |
| 文件頁數(shù)： | 20/102頁 |
| 文件大?。?/td> | 1609K |
| 代理商： | PF48F4400P0VTQ0 |
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1-Gbit P30 Family
April 2005
20
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
4.2
Signal Descriptions
This section has signal descriptions for the various P30 packages.
Table 3.
TSOP and Easy BGA Signal Descriptions (Sheet 1 of 2)
Symbol
Type
Name and Function
A[MAX:1]
Input
ADDRESS INPUTS:
Device address inputs. 64-Mbit: A[22:1]; 128-Mbit: A[23:1]; 256-Mbit: A[24:1];
512-Mbit: A[25:1].
See
Table 5 on page 22
and
Figure 10 on page 23
for 512-Mbit addressing.
DQ[15:0]
Input/
Output
DATA INPUT/OUTPUTS:
Inputs data and commands during write cycles; outputs data during
memory, Status Register, Protection Register, and Read Configuration Register reads. Data balls
float when the CE# or OE# are deasserted. Data is internally latched during writes.
ADV#
Input
ADDRESS VALID:
Active low input. During synchronous read operations, addresses are latched on
the rising edge of ADV#, or on the next valid CLK edge with ADV# low, whichever occurs first.
In asynchronous mode, the address is latched when ADV# going high or continuously flows through
if ADV# is held low.
WARNING: Designs not using ADV# must tie it to VSS to allow addresses to flow through.
CE#
Input
FLASH CHIP ENABLE:
Active low input. CE# low selects the associated flash memory die. When
asserted, flash internal control logic, input buffers, decoders, and sense amplifiers are active. When
deasserted, the associated flash die is deselected, power is reduced to standby levels, data and
WAIT outputs are placed in high-Z state.
WARNING: All chip enables must be high when device is not in use.
CLK
Input
CLOCK:
Synchronizes the device with the system’s bus frequency in synchronous-read mode.
During synchronous read operations, addresses are latched on the rising edge of ADV#, or on the
next valid CLK edge with ADV# low, whichever occurs first.
WARNING: Designs not using CLK for synchronous read mode must tie it to VCCQ or VSS.
OE#
Input
OUTPUT ENABLE:
Active low input. OE# low enables the device’s output data buffers during read
cycles. OE# high places the data outputs and WAIT in High-Z.
RST#
Input
RESET:
Active low input. RST# resets internal automation and inhibits write operations. This
provides data protection during power transitions. RST# high enables normal operation. Exit from
reset places the device in asynchronous read array mode.
WAIT
Output
WAIT:
Indicates data valid in synchronous array or non-array burst reads. Read Configuration
Register bit 10 (RCR[10], WT) determines its polarity when asserted. WAIT’s active output is V
OL
or
V
OH
when CE# and OE# are V
IL
. WAIT is high-Z if CE# or OE# is V
IH
.
In synchronous array or non-array read modes, WAIT indicates invalid data when asserted and
valid data when deasserted.
In asynchronous page mode, and all write modes, WAIT is deasserted.
WE#
Input
WRITE ENABLE:
Active low input. WE# controls writes to the device. Address and data are latched
on the rising edge of WE#.
WP#
Input
WRITE PROTECT:
Active low input. WP# low enables the lock-down mechanism. Blocks in lock-
down cannot be unlocked with the Unlock command. WP# high overrides the lock-down function
enabling blocks to be erased or programmed using software commands.
VPP
Power/
Input
Erase and Program Power:
A valid voltage on this pin allows erasing or programming. Memory
contents cannot be altered when V
PP
≤
V
PPLK
. Block erase and program at invalid V
PP
voltages
should not be attempted.
Set V
= V
for in-system program and erase operations. To accommodate resistor or diode drops
from the system supply, the V
level of V
can be as low as V
min. V
must remain above V
PPL
min to perform in-system flash modification. VPP may be 0 V during read operations.
V
can be applied to main blocks for 1000 cycles maximum and to parameter blocks for 2500
cycles.
VPP can be connected to 9 V for a cumulative total not to exceed 80 hours. Extended use of
this pin at 9 V may reduce block cycling capability.
VCC
Power
Device Core Power Supply:
Core (logic) source voltage. Writes to the flash array are inhibited when
V
CC
≤
V
LKO
. Operations at invalid V
CC
voltages should not be attempted.
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相關代理商/技術參數(shù) |
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| PF48F4400P0VTQ0A | 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel/Serial 1.8V 512M-Bit 32M x 16 88-Pin SCSP Tray 制造商:Micron Technology Inc 功能描述:NUMPF48F4400P0VTQ0A PF48F4400P0VTQ087456 |
| PF48F4400P0Z0C0 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:StrataFlash? Cellular Memory |
| PF48F4400P0Z0Q0 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:StrataFlash? Cellular Memory |
| PF48F4400P0Z0W0 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:StrataFlash? Cellular Memory |
| PF48F4400P0Z3C0 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:StrataFlash?? Cellular Memory |
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