參數(shù)資料
型號(hào)： PF48F3P0ZT00
廠商： Intel Corp.
英文描述： Intel StrataFlash Embedded Memory
中文描述： 英特爾StrataFlash嵌入式存儲(chǔ)器
文件頁數(shù)： 50/102頁
文件大?。?/td> 1609K
代理商： PF48F3P0ZT00
1-Gbit P30 Family
April 2005
50
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
9.2
Device Commands
Device operations are initiated by writing specific device commands to the Command User
Interface (CUI). See
Table 20, “Command Bus Cycles” on page 50
. Several commands are used to
modify array data including Word Program and Block Erase commands. Writing either command
to the CUI initiates a sequence of internally
-
timed functions that culminate in the completion of the
requested task. However, the operation can be aborted by either asserting RST# or by issuing an
appropriate suspend command.
Table 20.
Command Bus Cycles (Sheet 1 of 2)
Mode
Command
Bus
Cycles
First Bus Cycle
Second Bus Cycle
Oper
Addr
(1)
Data
(2)
Oper
Addr
(1)
Data
(2)
Read
Read Array
1
Write
DBA
0xFF
-
-
-
Read Device Identifier
≥
2
Write
DBA
0x90
Read
DBA + IA
ID
CFI Query
≥
2
Write
DBA
0x98
Read
DBA + QA
QD
Read Status Register
2
Write
DBA
0x70
Read
DBA
SRD
Clear Status Register
1
Write
DBA
0x50
-
-
-
Program
Word Program
2
Write
WA
0x40/
0x10
Write
WA
WD
Buffered Program
(3)
>
2
Write
WA
0xE8
Write
WA
N - 1
Buffered Enhanced Factory
Program (BEFP)
(4)
>
2
Write
WA
0x80
Write
WA
0xD0
Erase
Block Erase
2
Write
BA
0x20
Write
BA
0xD0
Suspend
Program/Erase Suspend
1
Write
DBA
0xB0
-
-
-
Program/Erase Resume
1
Write
DBA
0xD0
-
-
-
Block
Locking/
Unlocking
Lock Block
2
Write
BA
0x60
Write
BA
0x01
Unlock Block
2
Write
BA
0x60
Write
BA
0xD0
Lock-down Block
2
Write
BA
0x60
Write
BA
0x2F
相關(guān)PDF資料
PDF描述
PF48F4P0ZT00 Circular Connector; No. of Contacts:21; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-21
PF48F2000P0ZBQ0 Intel StrataFlash Embedded Memory
PF48F3000P0ZBQ0 CAP 0.01UF 63V 10% MET-POLY-BOX RAD5MM 7.5X6.5X2.5MM BULK
PF48F4000P0ZBQ0 Intel StrataFlash Embedded Memory
PF48F0P0ZBQ0 Intel StrataFlash Embedded Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PF48F3P0ZTQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F4000M0Y0CEA 制造商:Micron Technology Inc 功能描述:256BA/0BA SCSP 1.8 X16C HF - Trays
PF48F4000P0ZB 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Micron Parallel NOR Flash Embedded Memory (P30-65nm)
PF48F4000P0ZBQ0 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
PF48F4000P0ZBQ0A 功能描述:IC FLASH 256MBIT 100NS 88-SCSP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
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