參數(shù)資料
型號(hào): PF48F3P0ZT00
廠商: Intel Corp.
英文描述: Intel StrataFlash Embedded Memory
中文描述: 英特爾StrataFlash嵌入式存儲(chǔ)器
文件頁(yè)數(shù): 34/102頁(yè)
文件大?。?/td> 1609K
代理商: PF48F3P0ZT00
1-Gbit P30 Family
April 2005
34
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
7.2
Capacitance
Table 15.
Capacitance
Symbol
Parameter
Signals
Address, Data,
CE#, WE#, OE#,
RST#, CLK,
ADV#, WP#
Data, WAIT
Min
Typ
Max
Unit
Condition
Note
C
IN
Input Capacitance
2
6
7
pF
Typ temp = 25 °C,
Max temp = 85 °C,
V
= V
= (0 V - 1.95 V),
Discrete silicon die
1,2,3
C
OUT
NOTES:
1.
Output Capacitance
2
4
5
pF
Capacitance values are for a single die; for 2-die and 4-die stacks multiple the above values by the number of die in the
stack.
Sampled, not 100% tested.
Silicon die capacitance only, add 1 pF for discrete packages.
2.
3.
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相關(guān)代理商/技術(shù)參數(shù)
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PF48F4000P0ZBQ0A 功能描述:IC FLASH 256MBIT 100NS 88-SCSP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ