參數(shù)資料
型號(hào)： PF48F3P0ZT00
廠商： Intel Corp.
英文描述： Intel StrataFlash Embedded Memory
中文描述： 英特爾StrataFlash嵌入式存儲(chǔ)器
文件頁(yè)數(shù)： 1/102頁(yè)
文件大?。?/td> 1609K
代理商： PF48F3P0ZT00
Order Number: 306666, Revision: 001
April 2005
Intel StrataFlash
Embedded Memory
(P30)
1-Gbit P30 Family
Datasheet
Product Features
The Intel StrataFlash
Embedded Memory (P30) product is the latest generation of Intel
StrataFlash
memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance synchronous-
burst read mode, fast asynchronous access times, low power, flexible security options, and three
industry standard package choices.
The P30 product family is manufactured using Intel
130 nm ETOX VIII process technology.
■
High performance
— 85/88 ns initial access
— 40 MHz with zero wait states, 20 ns clock-to-
data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming
(BEFP) at 5 μs/byte (Typ)
— 1.8 V buffered programming at 7 μs/byte (Typ)
■
Architecture
— Multi-Level Cell Technology: Highest Density
at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte main blocks
■
Voltage and Power
— V
CC
(core) voltage: 1.7 V – 2.0 V
— V
CCQ
(I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 μA (Typ) for 256-Mbit
— 4-Word synchronous read current:
13 mA (Typ) at 40 MHz
■
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
1-Gbit in SCSP is –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX VIII process technology (130 nm)
■
Security
— One-Time Programmable Registers:
64 unique factory device identifier bits
64 user-programmable OTP bits
Additional 2048 user-programmable OTP bits
— Selectable OTP Space in Main Array:
4x32KB parameter blocks + 3x128KB main
blocks (top or bottom configuration)
— Absolute write protection: V
PP
= V
SS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
■
Software
— 20 μs (Typ) program suspend
— 20 μs (Typ) erase suspend
— Intel
Flash Data Integrator optimized
— Basic Command Set and Extended Command
Set compatible
— Common Flash Interface capable
■
Density and Packaging
— 64/128/256-Mbit densities in 56-Lead TSOP
package
— 64/128/256/512-Mbit densities in 64-Ball
Intel
Easy BGA package
— 64/128/256/512-Mbit and 1-Gbit densities in
Intel
QUAD+ SCSP
— 16-bit wide data bus
相關(guān)PDF資料
PDF描述
PF48F4P0ZT00 Circular Connector; No. of Contacts:21; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-21
PF48F2000P0ZBQ0 Intel StrataFlash Embedded Memory
PF48F3000P0ZBQ0 CAP 0.01UF 63V 10% MET-POLY-BOX RAD5MM 7.5X6.5X2.5MM BULK
PF48F4000P0ZBQ0 Intel StrataFlash Embedded Memory
PF48F0P0ZBQ0 Intel StrataFlash Embedded Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PF48F3P0ZTQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F4000M0Y0CEA 制造商:Micron Technology Inc 功能描述:256BA/0BA SCSP 1.8 X16C HF - Trays
PF48F4000P0ZB 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Micron Parallel NOR Flash Embedded Memory (P30-65nm)
PF48F4000P0ZBQ0 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
PF48F4000P0ZBQ0A 功能描述:IC FLASH 256MBIT 100NS 88-SCSP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤(pán) 其它名稱:71P71804S200BQ
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