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參數(shù)資料
| 型號(hào)： | PF48F3P0ZT00 |
| 廠商： | Intel Corp. |
| 英文描述： | Intel StrataFlash Embedded Memory |
| 中文描述： | 英特爾StrataFlash嵌入式存儲(chǔ)器 |
| 文件頁數(shù)： | 47/102頁 |
| 文件大?。?/td> | 1609K |
| 代理商： | PF48F3P0ZT00 |
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1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
47
8.3
Power Supply Decoupling
Flash memory devices require careful power supply de-coupling. Three basic power supply current
considerations are: 1) standby current levels; 2) active current levels; and 3) transient peaks
produced when CE# and OE# are asserted and deasserted.
When the device is accessed, many internal conditions change. Circuits within the device enable
charge-pumps, and internal logic states change at high speed. All of these internal activities
produce transient signals. Transient current magnitudes depend on the device outputs’ capacitive
and inductive loading. Two-line control and correct de-coupling capacitor selection suppress
transient voltage peaks.
Because Intel
Multi-Level Cell (MLC) flash memory devices draw their power from V
CC
, VPP,
and VCCQ, each power connection should have a 0.1 μF ceramic capacitor to ground. High-
frequency, inherently low-inductance capacitors should be placed as close as possible to package
leads.
Additionally, for every eight devices used in the system, a 4.7 μF electrolytic capacitor should be
placed between power and ground close to the devices. The bulk capacitor is meant to overcome
voltage droop caused by PCB trace inductance.
Figure 27.
Reset Operation Waveforms
(
A) Reset during
read mode
(B) Reset during
program or block erase
P1
≤
P2
(C) Reset during
program or block erase
P1
≥
P2
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
RST# [P]
RST# [P]
RST# [P]
Abort
Complete
Abort
Complete
V
CC
0V
V
CC
(D) VCC Power-up to
RST# high
P1
R5
P2
P3
P2
R5
R5
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| PF48F4000P0ZBQ0 | Intel StrataFlash Embedded Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PF48F3P0ZTQ0 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| PF48F4000M0Y0CEA | 制造商:Micron Technology Inc 功能描述:256BA/0BA SCSP 1.8 X16C HF - Trays |
| PF48F4000P0ZB | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Micron Parallel NOR Flash Embedded Memory (P30-65nm) |
| PF48F4000P0ZBQ0 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory |
| PF48F4000P0ZBQ0A | 功能描述:IC FLASH 256MBIT 100NS 88-SCSP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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