參數(shù)資料
型號(hào)： PF48F3P0ZT00
廠商： Intel Corp.
英文描述： Intel StrataFlash Embedded Memory
中文描述： 英特爾StrataFlash嵌入式存儲(chǔ)器
文件頁數(shù)： 36/102頁
文件大?。?/td> 1609K
代理商： PF48F3P0ZT00
1-Gbit P30 Family
April 2005
36
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
R305
t
CHQX
Output hold from CLK
3
-
ns
1,5
R306
t
CHAX
Address hold from CLK
10
-
ns
1,4,5
R307
t
CHTV
CLK to WAIT valid
-
20
ns
1,5
R311
t
CHVL
CLK Valid to ADV# Setup
3
-
ns
1
R312
t
CHTX
WAIT Hold from CLK
3
-
ns
1,5
NOTES:
1.
See
Figure 13, “AC Input/Output Reference Waveform” on page 33
for timing measurements and max allowable input
slew rate.
OE# may be delayed by up to t
ELQV
– t
GLQV
after CE#’s falling edge without impact to t
ELQV
.
Sampled, not 100% tested.
Address hold in synchronous burst mode is t
or t
VHAX
, whichever timing specification is satisfied first.
Applies only to subsequent synchronous reads.
See your local Intel representative for designs requiring higher than 40 MHz synchronous operation.
2.
3.
4.
5.
6.
Table 16.
AC Read Specifications for 64/128-Mbit Densities (Sheet 2 of 2)
Num
Symbol
Parameter
Min
Max
Unit
Notes
Table 17.
AC Read Specifications for 256/512-Mbit and 1-Gbit Densities (Sheet 1 of 2)
Num
Symbol
Parameter
Speed
Min
Max
Unit
Notes
Asynchronous Specifications
R1
t
AVAV
Read cycle time
Vcc = 1.8 V
– 2.0 V
85
-
ns
Vcc = 1.7 V
– 2.0 V
88
-
R2
t
AVQV
Address to output valid
Vcc = 1.8 V
– 2.0 V
-
85
ns
Vcc = 1.7 V
– 2.0 V
-
88
R3
t
ELQV
CE# low to output valid
Vcc = 1.8 V
– 2.0 V
-
85
ns
Vcc = 1.7 V
– 2.0 V
-
88
R4
t
GLQV
OE# low to output valid
-
25
ns
1,2
R5
t
PHQV
RST# high to output valid
-
150
ns
1
R6
t
ELQX
CE# low to output in low-Z
0
-
ns
1,3
R7
t
GLQX
OE# low to output in low-Z
0
-
ns
1,2,3
R8
t
EHQZ
CE# high to output in high-Z
-
24
ns
1,3
R9
t
GHQZ
OE# high to output in high-Z
-
24
ns
R10
t
OH
Output hold from first occurring address, CE#, or OE# change
0
-
ns
R11
t
EHEL
CE# pulse width high
20
-
ns
1
R12
t
ELTV
CE# low to WAIT valid
-
17
ns
R13
t
EHTZ
CE# high to WAIT high-Z
-
20
ns
1,3
R15
t
GLTV
OE# low to WAIT valid
-
17
ns
1
R16
t
GLTX
OE# low to WAIT in low-Z
0
-
ns
1,3
R17
t
GHTZ
OE# high to WAIT in high-Z
-
20
ns
Latching Specifications
相關(guān)PDF資料
PDF描述
PF48F4P0ZT00 Circular Connector; No. of Contacts:21; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-21
PF48F2000P0ZBQ0 Intel StrataFlash Embedded Memory
PF48F3000P0ZBQ0 CAP 0.01UF 63V 10% MET-POLY-BOX RAD5MM 7.5X6.5X2.5MM BULK
PF48F4000P0ZBQ0 Intel StrataFlash Embedded Memory
PF48F0P0ZBQ0 Intel StrataFlash Embedded Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PF48F3P0ZTQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F4000M0Y0CEA 制造商:Micron Technology Inc 功能描述:256BA/0BA SCSP 1.8 X16C HF - Trays
PF48F4000P0ZB 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Micron Parallel NOR Flash Embedded Memory (P30-65nm)
PF48F4000P0ZBQ0 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
PF48F4000P0ZBQ0A 功能描述:IC FLASH 256MBIT 100NS 88-SCSP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*