參數(shù)資料
型號: PC28F256J3C-150
廠商: Intel Corp.
英文描述: Intel StrataFlash Memory (J3)
中文描述: 英特爾StrataFlash存儲器(J3)
文件頁數(shù): 55/72頁
文件大小: 905K
代理商: PC28F256J3C-150
256-Mbit J3 (x8/x16)
Datasheet
55
A.5
System Interface Information
The following device information can optimize system interface software.
A.6
Device Geometry Definition
This field provides critical details of the flash device geometry.
0000h means no second vendor-specified algorithm exists
Secondary algorithm Extended Query Table address.
0000h means none exists
18:
19:
1A:
--00
--00
--00
19h
2
Table 27. CFI Identification (Sheet 2 of 2)
Offset
Length
Description
Add.
Hex
Code
Value
Table 28. System Interface Information
Offset
Length
Description
Add.
Hex
Code
Value
1Bh
1
V
logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
V
logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
V
PP
[programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
V
[programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
“n” such that typical single word program time-out = 2
n
μs
“n” such that typical max. buffer write time-out = 2
n
μs
“n” such that typical block erase time-out = 2
n
ms
“n” such that typical full chip erase time-out = 2
n
ms
“n” such that maximum word program time-out = 2
n
times
typical
“n” such that maximum buffer write time-out = 2
n
times typical
“n” such that maximum block erase time-out = 2
n
times typical
“n” such that maximum chip erase time-out = 2
n
times typical
1B:
--27
2.7 V
1Ch
1
1C:
--36
3.6 V
1Dh
1
1D:
--00
0.0 V
1Eh
1
1E:
--00
0.0 V
1Fh
20h
21h
22h
1
1
1
1
1F:
20:
21:
22:
--08
--08
--0A
--00
256 μs
256 μs
1 s
NA
23h
1
23:
--04
2 ms
24h
25h
26h
1
1
1
24:
25:
26:
--04
--04
--00
2 ms
16 s
NA
Table 29. Device Geometry Definition (Sheet 1 of 2)
Offset
Length
Description
Code See Table
Below
27:
27h
1
“n” such that device size = 2
n
in number of bytes
28h
2
Flash device interface: x8 async x16 async x8/x16 async
28:
--02
x8/
x16
28:00,29:00 28:01,29:00 28:02,29:00
“n” such that maximum number of bytes in write buffer = 2
n
29:
2A:
2B:
--00
--05
--00
2Ah
2
32
相關PDF資料
PDF描述
PC28F128J3A-110 Intel StrataFlash Memory (J3)
PC28F128J3A-115 Intel StrataFlash Memory (J3)
PC28F640J3C-125 Intel StrataFlash Memory (J3)
PC28F640J3C-150 Intel StrataFlash Memory (J3)
PC28F640J3A-110 Intel StrataFlash Memory (J3)
相關代理商/技術參數(shù)
參數(shù)描述
PC28F256J3D95A 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
PC28F256J3D95B 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
PC28F256J3F950 制造商:Micron Technology Inc 功能描述:256MB, TURLOCK EBGA 3.0 LF - Trays
PC28F256J3F95A 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
PC28F256J3F95B 制造商:Micron Technology Inc 功能描述:16MX16 NOR FLASH PLASTIC PBF TBGA 3.0V - Tape and Reel