- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369948 > PC28F256J3C-110 (Intel Corp.) Intel StrataFlash Memory (J3) PDF資料下載
參數(shù)資料
| 型號： | PC28F256J3C-110 |
| 廠商： | Intel Corp. |
| 英文描述： | Intel StrataFlash Memory (J3) |
| 中文描述： | 英特爾StrataFlash存儲器（J3） |
| 文件頁數(shù)： | 27/72頁 |
| 文件大?。?/td> | 905K |
| 代理商： | PC28F256J3C-110 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁當(dāng)前第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁
256-Mbit J3 (x8/x16)
Datasheet
27
7.3
Block Erase, Program, and Lock-Bit Configuration
Performance
Table 10. Configuration Performance
#
Sym
Parameter
Typ
Max
(8)
Unit
Notes
W16
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
218
654
μs
1,2,3,4,5,6,7
W16
t
WHQV3
t
EHQV3
Byte Program Time (Using Word/Byte Program Command)
210
630
μs
1,2,3,4
Block Program Time (Using Write to Buffer Command)
0.8
2.4
sec
1,2,3,4
W16
t
WHQV4
t
EHQV4
Block Erase Time
1.0
5.0
sec
1,2,3,4
W16
t
WHQV5
t
EHQV5
Set Lock-Bit Time
64
75/85
μs
1,2,3,4,9
W16
t
WHQV6
t
EHQV6
Clear Block Lock-Bits Time
0.5
0.70/1.4
sec
1,2,3,4,10
W16
t
WHRH1
t
EHRH1
Program Suspend Latency Time to Read
25
75/90
μs
1,2,3,9
W16
t
WHRH
t
EHRH
Erase Suspend Latency Time to Read
26
35/40
μs
1,2,3,9
NOTES:
1. Typical values measured at T
A
= +25 °C and nominal voltages. Assumes corresponding lock-bits are
not set. Subject to change based on device characterization.
2. These performance numbers are valid for all speed versions.
3. Sampled but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (t
WHQV1
, t
EHQV1
) is 6.8 μs/byte (typical).
7. Effective per-word program time (t
WHQV2
, t
EHQV2
) is 13.6 μs/word (typical).
8. Max values are measured at worst case temperature and V
CC
corner after 100k cycles (except as
noted).
9. Max values are expressed at -25 °C/-40 °C.
10.Max values are expressed at 25 °C/-40 °C.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PC28F128J3C-110 | Intel StrataFlash Memory (J3) |
| PC28F640J3C-110 | Intel StrataFlash Memory (J3) |
| PC28F320J3C-110 | Intel StrataFlash Memory (J3) |
| PC28F320J3A-110 | Intel StrataFlash Memory (J3) |
| PC28F320J3A-115 | Intel StrataFlash Memory (J3) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PC28F256J3C-115 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| PC28F256J3C-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| PC28F256J3C125 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash?? Memory |
| PC28F256J3C-125 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| PC28F256J3C125 S B93 | 制造商:Intel 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。