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參數(shù)資料
| 型號： | PBR941B |
| 英文描述： | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | TO-236 |
| 中文描述： | 晶體管|晶體管|叩| 10V的五（巴西）總裁| 50mA的一（c）|至236 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 149K |
| 代理商： | PBR941B |
2001 Jan 18
4
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics
V
(BR)CBO
V
(BR)CEO
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
forward base-emitter voltage
collector-base leakage current
emitter-base leakage current
DC current gain
I
C
= 100
μ
A; I
E
= 0
I
C
= 100
μ
A; I
B
= 0
20
10
V
V
V
(BR)EBO
V
BEF
I
CBO
I
EBO
h
FE
I
E
= 10
μ
A; I
C
= 0
I
E
= 25 mA
V
CB
= 10 V; I
E
= 0
V
EB
= 1 V; I
C
= 0
I
C
= 5 mA; V
CE
= 6 V
I
C
= 15 mA; V
CE
= 6 V
1.5
100
150
150
1.05
100
100
200
V
V
nA
nA
AC characteristics
C
re
f
T
|
s
21
|
2
G
UM
feedback capacitance
transition frequency
insertion gain
maximum unilateral power gain;
note 1
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 6 V; f
m
= 1 GHz
I
C
= 15 mA; V
CE
= 6 V; f = 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°
C; f = 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°
C; f = 2 GHz
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 1 GHz
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz
7
13
0.3
9
15
16
pF
GHz
dB
dB
10
dB
NF
noise figure
1.5
2.5
dB
2.1
dB
G
UM
10
s
)
1
(
1
s
112
–
(
s
222
–
)
-------------------------------------------------------- dB
log
=
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