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參數(shù)資料
| 型號： | PBR941B |
| 英文描述： | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | TO-236 |
| 中文描述： | 晶體管|晶體管|叩| 10V的五（巴西）總裁| 50mA的一（c）|至236 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 149K |
| 代理商： | PBR941B |
2001 Jan 18
2
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
FEATURES
Small size
Low noise
Low distortion
High gain
Gold metallization ensures excellent reliability.
APPLICATIONS
Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
PINNING SOT23
PIN
DESCRIPTION
1
2
3
base
emitter
collector
handbook, halfpage
MSB003
Top view
1
2
3
Fig.1 Simplified outline (SOT23).
Marking code
: LBp
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
7
TYP.
MAX.
UNIT
C
re
f
T
G
UM
feedback capacitance
transition frequency
maximum unilateral power gain
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 6 V; f
m
= 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°
C; f = 1 GHz
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 1 GHz
T
s
= 60
°
C; note 1
0.3
9
16
pF
GHz
dB
NF
noise figure
1.5
2.5
dB
P
tot
R
th j-s
total power dissipation
thermal resistance from junction
to soldering point
360
320
mW
K/W
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