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參數(shù)資料
| 型號(hào)： | PA28F002BC-T80 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| 中文描述： | 256K X 8 FLASH 12V PROM, 80 ns, PDSO44 |
| 封裝： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件頁(yè)數(shù)： | 27/37頁(yè) |
| 文件大?。?/td> | 455K |
| 代理商： | PA28F002BC-T80 |
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E
4.2.3
28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
27
PRELIMINARY
DC CHARACTERISTICS
Table 7. DC Characteristics
Symbol
Parameter
Notes
Min
Typ
Max
Units
Test Conditions
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
V
CC
= V
CC
Max
CE# = RP# = WP# =
V
IH
V
CC
= V
CC
Max
CE# = RP# = V
CC
±
0.2V
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
RP# = GND ± 0.2V
CMOS INPUTS
V
CC
= V
CC
Max
CE# = GND
f = 10 MHz
I
OUT
= 0 mA
CMOS Inputs: GND ±
0.2V or V
CC
± 0.2V
TTL INPUTS
V
CC
= V
CC
Max
CE# = V
IL
f = 10 MHz
I
OUT
= 0 mA
TTL Inputs: V
IL
or V
IH
Byte Prog. in Progress
I
IL
Input Load Current
1
± 1.0
μA
I
LO
Output Leakage Current
1
± 10
μA
I
CCS
V
CC
Standby Current
1,3
1.5
mA
50
100
μA
I
CCD
V
CC
Deep Power-Down
Current
1
0.2
8.0
μA
I
CCR
V
CC
Read Current
1,5
20
55
mA
20
60
mA
I
CCW
V
CC
Program Current
1,4
50
mA
I
CCE
V
CC
Erase Current
1,4
30
mA
Block Erase in
Progress
CE# = V
IH
Block Erase Suspend
V
PP
≤
V
CC
I
CCES
V
CC
Erase Suspend
Current
V
PP
Standby Current
1,2
5
10
mA
I
PPS
1
± 10
μA
I
PPD
V
Deep Power-Down
Current
1
5.0
μA
RP# = GND ± 0.2V
I
PPR
V
PP
Read Current
1
200
μA
V
PP
>
V
CC
V
PP
= V
PPH
Byte Prog. in Progress
V
PP
= V
PPH
Block Erase in
Progress
V
PP
= V
PPH
Block Erase
Suspended
I
PPW
V
PP
Program Current
1,4
20
mA
I
PPE
V
PP
Erase Current
1,4
15
mA
I
PPES
V
PP
Erase Suspend
Current
1
200
μA
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