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參數(shù)資料
| 型號： | PA28F002BC-T80 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| 中文描述： | 256K X 8 FLASH 12V PROM, 80 ns, PDSO44 |
| 封裝： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件頁數(shù)： | 24/37頁 |
| 文件大?。?/td> | 455K |
| 代理商： | PA28F002BC-T80 |
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28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
E
24
PRELIMINARY
3.7
Power Supply Decoupling
Flash memory’s power switching characteristics
require careful device decoupling methods. System
designers should consider three supply current
issues:
1.
Standby current levels (I
CCS
)
2.
Active current levels (I
CCR
)
3.
Transient peaks produced by falling and rising
edges of CE#
Transient current magnitudes depend on the device
outputs’ capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
flash device should have a 0.1 μF ceramic
capacitor connected between each V
CC
and GND,
and between its V
PP
and GND. These high-
frequency, inherently low-inductance capacitors
should be placed as close as possible to the
package leads.
3.7.1
V
TRACE ON PRINTED CIRCUIT
BOARDS
Designing for in-system writes to the flash memory
requires special consideration of the V
PP
power
supply trace by the printed circuit board designer.
The V
PP
pin supplies the flash memory cells current
for programming and erasing. One should use
similar trace widths and layout considerations given
to the V
CC
power supply trace. Adequate V
PP
supply traces and decoupling capacitors placed
adjacent to the component will decrease spikes and
overshoots.
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| PA28F004S3-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
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