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參數(shù)資料
| 型號： | NTLJS3113P |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 78K |
| 代理商： | NTLJS3113P |
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 3
1
Publication Order Number:
NTLJS3113P/D
NTLJS3113P
Power MOSFET
20 V, 7.7 A, Cool Single PChannel,
2x2 mm, WDFN Package
Features
WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
2x2 mm Footprint Same as SC88 Package
Lowest R
DS(on)
Solution in 2x2 mm Package
1.5 V R
DS(on)
Rating for Operation at Low Voltage Logic Level Gate
Drive
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
This is a PbFree Device
Applications
DCDC Converters (Buck and Boost Circuits)
Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
High Side Load Switch
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
20
±
8.0
5.8
V
GatetoSource Voltage
Continuous Drain
Current (Note 1)
V
A
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
4.4
t
≤
5 s
Steady
State
7.7
Power Dissipation
(Note 1)
T
A
= 25
°
C
P
D
1.9
W
t
≤
5 s
3.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
I
D
3.5
A
2.5
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
0.7
W
Pulsed Drain Current
t
p
= 10 s
I
DM
23
A
°
C
Operating Junction and Storage Temperature
T
J
, T
STG
55 to
150
Source Current (Body Diode) (Note 2)
I
S
T
L
2.8
A
°
C
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm
2
, 2 oz Cu).
260
http://onsemi.com
20 V
50 m @ 2.5 V
40 m @ 4.5 V
R
DS(on)
MAX
7.7 A
I
D
MAX
(Note 1)
V
(BR)DSS
75 m @ 1.8 V
200 m @ 1.5 V
G
S
PCHANNEL MOSFET
D
J8
M
= Specific Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
J8M
1
2
3
6
5
4
WDFN6
CASE 506AP
MARKING
DIAGRAM
Device
Package
Shipping
ORDERING INFORMATION
NTLJS3113PT1G
WDFN6
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
2
3
6
5
4
D
D
G
D
D
S
(Top View)
PIN CONNECTIONS
D
S
S
D
Pin 1
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTLJS3113P_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −20 V, −7.7 A, uCool TM Single 2x2 mm, WDFN Package |
| NTLJS3113PT1G | 功能描述:MOSFET PFET 2X2 20V 9.5A 42MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLJS3113PTAG | 功能描述:MOSFET PFET 20V 9.5A 42MOHM 2X2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTLJS3180PZ | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET |
| NTLJS3180PZTAG | 功能描述:MOSFET 20V UCOOL SNGL P-CH 7.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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