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參數(shù)資料
| 型號(hào)： | NTMD3P03R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET -3.05 Amps, -30 Volts Dual P–Channel SO–8(-3.05 A, -30 V，雙P通道,SO-8封裝的功率MOSFET) |
| 中文描述： | 2340 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 751-07, SOIC-8 NB, 8 PIN |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | NTMD3P03R2 |
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 0
1
Publication Order Number:
NTMD3P03R2/D
NTMD3P03R2
Product Preview
Power MOSFET
-3.05 Amps, -30 Volts
Dual P–Channel SO–8
Features
High Efficiency Components in a Dual SO–8 Package
High Density Power MOSFET with Low RDS(on)
Miniature SO–8 Surface Mount Package – Saves Board Space
Diode Exhibits High Speed with Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for the SO–8 Package is Provided
Applications
DC–DC Converters
Low Voltage Motor Control
Power Management in Portable and Battery–Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MOSFET MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Thermal Resistance –
Junction–to–Ambient (Note 1.)
Total Power Dissipation @ TA = 25
°
C
Continuous Drain Current @ 25
°
C
Continuous Drain Current @ 70
°
C
Pulsed Drain Current (Note 4.)
Thermal Resistance –
Junction–to–Ambient (Note 2.)
Total Power Dissipation @ TA = 25
°
C
Continuous Drain Current @ 25
°
C
Continuous Drain Current @ 70
°
C
Pulsed Drain Current (Note 4.)
Thermal Resistance –
Junction–to–Ambient (Note 3.)
Total Power Dissipation @ TA = 25
°
C
Continuous Drain Current @ 25
°
C
Continuous Drain Current @ 70
°
C
Pulsed Drain Current (Note 4.)
Operating and Storage
Temperature Range
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = –30 Vdc, VGS = –4.5 Vdc, Peak
IL = –7.5 Apk, L = 5 mH, RG = 25
)
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. Minimum FR–4 or G–10 PCB, t = Steady State.
2. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single
sided), t = steady state.
3. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single
sided), t
≤
10 seconds.
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
VDSS
VGS
–30
±
20
V
V
R
θ
JA
PD
ID
ID
IDM
171
0.73
–2.34
–1.87
–8.0
°
C/W
W
A
A
A
R
θ
JA
PD
ID
ID
IDM
100
1.25
–3.05
–2.44
–12
°
C/W
W
A
A
A
R
θ
JA
PD
ID
ID
IDM
TJ, Tstg
62.5
2.0
–3.86
–3.1
–15
–55 to
+150
140
°
C/W
W
A
A
A
°
C
EAS
mJ
TL
260
°
C
Device
Package
Shipping
ORDERING INFORMATION
NTMD3P03R2
SO–8
2500/Tape & Reel
http://onsemi.com
P–Channel
D
S
G
2
Source–1
Gate–1
Source–2
Gate–2
3
4
1
7
6
5
8
Drain–1
Drain–1
Drain–2
Drain–2
Top View
PIN ASSIGNMENT
–3.05 AMPERES
–30 VOLTS
0.085 @ VGS = –10 V
This document contains information on a product under
development. ON Semiconductor reserves the right to
change or discontinue this product without notice.
SO–8
CASE 751
STYLE 11
1
8
ED3P03
LYWW
ED3P03 = Device Code
L
= Assembly Location
Y
= Year
WW
= Work Week
MARKING
DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTMD3P03R2/D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Power MOSFET -3.05 Amps， -30 Volts |
| NTMD3P03R2_06 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET -3.05 Amps, -30 Volts |
| NTMD3P03R2G | 功能描述:MOSFET 30V 3.05A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD4184PF | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode |
| NTMD4184PFR2G | 功能描述:MOSFET PFET FTKY S08 30V TR 3.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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