參數(shù)資料
型號： NTMD6N03R2
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET
中文描述： 6 A, 30 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 751-07, SOIC-8
文件頁數(shù)： 1/8頁
文件大?。?/td> 74K
代理商： NTMD6N03R2
Semiconductor Components Industries, LLC, 2005
January, 2005 Rev. 1
1
Publication Order Number:
NTMD6N03R2/D
NTMD6N03R2
Power MOSFET
30 V, 6 A, Dual NChannel SO8
Features
Designed for use in low voltage, high speed switching applications
Ultra Low OnResistance Provides
Higher Efficiency and Extends Battery Life
R
DS(on)
= 0.024 , V
GS
= 10 V (Typ)
R
DS(on)
= 0.030 , V
GS
= 4.5 V (Typ)
Miniature SO8 Surface Mount Package Saves Board Space
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
Applications
DcDc Converters
Computers
Printers
Cellular and Cordless Phones
Disk Drives and Tape Drives
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current
Continuous @ T
A
= 25
°
C
Single Pulse (tp
≤
10 s)
Total Power Dissipation
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 2)
Operating and Storage Temperature
Range
V
DSS
V
GS
30
20
Volts
Volts
I
D
I
DM
P
D
6.0
30
Adc
Apk
Watts
2.0
1.29
T
J
, T
stg
55 to
+150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 30 Vdc, V
GS
= 5.0 Vdc,
V
DS
= 20 Vdc, Peak I
L
= 9.0 Apk,
L = 10 mH, R
G
= 25
)
Thermal Resistance
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
E
AS
325
mJ
R
JA
62.5
97
°
C/W
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1
″
pad size, t
≤
10 s
2. When surface mounted to an FR4 board using 1
″
pad size, t = steady state
Device
Package
Shipping
ORDERING INFORMATION
NTMD6N03R2
SO8
2500/Tape & Reel
SO8, DUAL
CASE 751
STYLE 11
2
Source1
Gate1
Source2
Gate2
3
4
1
7
6
5
8
Drain1
Drain1
Drain2
Drain2
(Top View)
PIN ASSIGNMENTS
E6N03
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
http://onsemi.com
D
S
G
NChannel
D
S
G
1
8
V
DSS
R
DS(ON)
TYP
I
D
MAX
30 V
24 m
@ V
GS
= 10 V
6.0 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MARKING
DIAGRAM
E6N03
LYWW
1
8
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參數(shù)描述
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