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參數(shù)資料
| 型號(hào)： | NTMFS4119N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30 V, 30 A(30V, 30A, 功率MOSFET) |
| 中文描述： | 功率MOSFET 30五，30甲（30V的，30A條，功率MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 63K |
| 代理商： | NTMFS4119N |
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 4
1
Publication Order Number:
NTMFS4119N/D
NTMFS4119N
Power MOSFET
30 V, 30 A, Single NChannel,
SO8 Flat Lead
Features
Low R
DS(on)
Fast Switching Times
Low Inductance SO8 Package
These are PbFree Devices
Applications
Notebooks, Graphics Cards
Low Side Switch
DCDC
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
V
GatetoSource Voltage
20
V
Continuous Drain Current
(Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
18
A
13
t
10 s
30
Power Dissipation (Note 1)
Steady
State
T
A
= 25
°
C
P
D
2.3
W
t
10 s
6.1
Continuous Drain Current
(Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
t
p
= 10 s
I
D
11
A
8.0
Power Dissipation (Note 2)
P
D
I
DM
0.9
W
Pulsed Drain Current
89
A
°
C
Operating Junction and Storage Temperature
T
J
, T
stg
55 to
150
Source Current (Body Diode)
I
S
8.0
A
Single Pulse DraintoSource Avalanche Energy
(V
DD
= 30 V, V
GS
= 10 V, I
PK
= 29 A,
L = 1 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
E
AS
421
mJ
T
L
260
°
C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
JunctiontoCase Steady State
R
JC
R
JA
R
JA
R
JA
1.3
°
C/W
JunctiontoAmbient Steady State (Note 1)
53.7
JunctiontoAmbient t
10 s (Note 1)
20.5
JunctiontoAmbient Steady State (Note 2)
138.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
G
D
S
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4119NT1G
SO8 FL
(PbFree)
1500 Tape & Reel
SO8 FLAT LEAD
CASE 488AA
STYLE 1
1
MARKING
DIAGRAM
D
4119N
AYWW
S
S
S
G
D
D
D
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
NTMFS4119NT3G
SO8 FL
(PbFree)
5000 Tape & Reel
30 V
3.1 m @ 4.5 V
2.3 m @ 10 V
R
DS(on)
Typ
30 A
I
D
Max
(Note 1)
V
(BR)DSS
4119N
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
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|---|---|
| NTMFS4119NT1G | 功能描述:MOSFET NFET 32A 30V 2.7MOH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4119NT3G | 功能描述:MOSFET NFET 32A 30V 2.7MOH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4120N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead |
| NTMFS4120NT1G | 功能描述:MOSFET 30V 31A Single N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4120NT3G | 功能描述:MOSFET 30V 31A Single N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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