參數(shù)資料
型號： NTMFS4707N
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： Power MOSFET 30 V, 17 A(30V, 17A, 功率MOSFET)
中文描述： 6900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： CASE 488AA-01, SO-8
文件頁數(shù)： 1/6頁
文件大小： 136K
代理商： NTMFS4707N
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 2
1
Publication Order Number:
NTMFS4707N/D
NTMFS4707N
Power MOSFET
30 V, 17 A, Single N
Channel,
SOIC
8 Flat Lead
Features
Fast Switching Times
Low Gate Charge
Low R
DS(on)
Low Inductance SOIC
8 Package
These are Pb
Free Devices
Applications
Notebooks, Graphics Cards
DC
DC Converters
Synchronous Rectification
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
Gate
to
Source Voltage
Continuous Drain Current
(Note 1)
V
DSS
V
GS
I
D
30
±
20
10.2
7.4
17
2.3
V
V
A
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
t
≤
10 s
Steady
State
Power Dissipation (Note 1)
T
A
= 25
°
C
P
D
W
t
≤
10 s
6.25
6.9
4.9
1.0
51
55 to
150
Continuous Drain Current
(Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
t
p
≤
10 s
I
D
A
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature
P
D
I
DM
T
J
,
T
STG
I
S
E
AS
W
A
°
C
Source Current (Body Diode)
Single Pulse Drain
to
Source Avalanche Energy
(V
DD
= 25 V, V
GS
= 10 V, I
PK
= 7.0 A,
L = 10 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
6.25
245
A
mJ
T
L
260
°
C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction
to
Ambient – Steady State (Note 1)
R
JA
R
JA
R
JA
55
°
C/W
Junction
to
Ambient – t
≤
10 s (Note 1)
20
Junction
to
Ambient – Steady State (Note 2)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface
mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
122.5
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4707NT1G SOIC
8 FL
(Pb
Free)
1500 / Tape & Reel
SOIC
8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
1
4707N
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb
Free Package
4707N
AYWW
S
S
S
G
N
Channel
D
S
G
30 V
13.5 m @ 4.5 V
10 m @ 10 V
R
DS(on)
Typ
17 A
I
D
Max
V
(BR)DSS
D
D
D
D
NTMFS4707NT3G
5000 / Tape & Reel
SOIC
8 FL
(Pb
Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTMFS4707NT1G 功能描述:MOSFET 30V 17A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4707NT3G 功能描述:MOSFET 30V 17A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4708N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL
NTMFS4708NT1G 功能描述:MOSFET 30V 19A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4708NT3G 功能描述:MOSFET 30V 19A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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