參數(shù)資料
型號： NTMFS4834N
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET 30 V, 130 A(30V, 130A, 功率MOSFET)
中文描述： 功率MOSFET 30五，130（30V的，130A的，功率MOSFET的）
文件頁數(shù)： 1/6頁
文件大?。?/td> 75K
代理商： NTMFS4834N
Semiconductor Components Industries, LLC, 2006
November, 2006 Rev. 1
1
Publication Order Number:
NTMFS4834N/D
NTMFS4834N
Power MOSFET
30 V, 130 A, Single NChannel, SO8 FL
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Devices*
Applications
CPU Power Delivery
DCDC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
V
DSS
V
GS
I
D
Value
30
±
20
21
Unit
V
V
A
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current R
JA
(Note 1)
Power Dissipation
R
JA
(Note 1)
Continuous Drain
Current R
JA
(Note 2)
Power Dissipation
R
JA
(Note 2)
Continuous Drain
Current R
JC
(Note 1)
Power Dissipation
R
JC
(Note 1)
Pulsed Drain
Current
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse DraintoSource Avalanche
Energy (T
J
= 25
°
C, V
DD
= 30 V, V
GS
= 10 V,
I
L
= 32 A
pk
, L = 1.0 mH, R
G
= 25
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
15
T
A
= 25
°
C
P
D
2.31
W
T
A
= 25
°
C
ID
13
A
T
A
= 85
°
C
9.5
T
A
= 25
°
C
P
D
0.9
W
T
C
= 25
°
C
I
D
130
A
T
C
= 85
°
C
93
T
C
= 25
°
C
P
D
86.2
W
T
A
= 25
°
C,
t
p
= 10 s
I
DM
260
A
T
J
, T
STG
55 to
+150
71
6
512
°
C
I
S
A
dV/dt
EAS
V/ns
mJ
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING
DIAGRAM
D
http://onsemi.com
A
Y
WW
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
30 V
3.0 m @ 10 V
130 A
4.0 m @ 4.5 V
G (4)
S (1,2,3)
NCHANNEL MOSFET
D (5,6)
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4834NT1G
SO8 FL
(PbFree)
1500 Tape / Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTMFS4834NT3G
SO8 FL
(PbFree)
5000 Tape / Reel
SO8 FLAT LEAD
CASE 488AA
STYLE 1
1
4834N
AYWW
S
S
S
G
D
D
D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTMFS4834NT1G 功能描述:MOSFET NFET 30V 130A 3MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4834NT3G 功能描述:MOSFET NFET 30V 130A 3MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4835N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL
NTMFS4835NT1G 功能描述:MOSFET NFET SO8FL 30V 104A 3.5mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMFS4835NT3G 功能描述:MOSFET NFET SO8FL 30V 104A 3.5mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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