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參數(shù)資料
| 型號(hào)： | NTMS10P02R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Power MOSFET -10 Amps, -20 Volts N-Channel Enhancement Mode Single SO-8 Package(-10A, -20 V，單N通道，增強(qiáng)模式，SO-8封裝的功率MOSFET) |
| 中文描述： | 8800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-07, SOIC-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 92K |
| 代理商： | NTMS10P02R2 |
Semiconductor Components Industries, LLC, 2003
December, 2003 Rev. 2
1
Publication Order Number:
NTMS10P02R2/D
NTMS10P02R2
Power MOSFET
10 Amps, 20 Volts
PChannel EnhancementMode
Single SO8 Package
Features
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature SO8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
SO8 Mounting Information Provided
Applications
Power Management in Portable and BatteryPowered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Thermal Resistance
JunctiontoAmbient (Note 1.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ 25
°
C
Continuous Drain Current @ 70
°
C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 3.)
Thermal Resistance
JunctiontoAmbient (Note 2.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ 25
°
C
Continuous Drain Current @ 70
°
C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 3.)
Operating and Storage
Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 20 Vdc, V
GS
= 4.5 Vdc,
Peak I
L
= 5.0 Apk, L = 40 mH,
R
G
= 25
)
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. Mounted onto a 2
″
square FR4 Board (1
″
sq. Cu 0.06
″
thick single sided),
t = 10 seconds.
2. Mounted onto a 2
″
square FR4 Board (1
″
sq. Cu 0.06
″
thick single sided),
t = steady state.
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%.
V
DSS
V
GS
20
12
Vdc
Vdc
R
θ
JA
P
D
I
D
I
D
P
D
I
D
I
DM
50
2.5
10
8.0
0.6
5.5
50
°
C/W
W
A
A
W
A
A
R
θ
JA
P
D
I
D
I
D
P
D
I
D
I
DM
T
J
, T
stg
80
1.6
8.8
6.4
0.4
4.5
44
55 to
+150
500
°
C/W
W
A
A
W
A
A
°
C
E
AS
mJ
T
L
260
°
C
Device
Package
Shipping
ORDERING INFORMATION
NTMS10P02R2
SO8
2500/Tape & Reel
SO8
CASE 751
STYLE 12
1
PChannel
D
S
G
8
2
Source
Source
Source
Gate
3
4
1
7
6
5
8
Drain
Drain
Drain
Drain
Top View
MARKING DIAGRAM
& PIN ASSIGNMENT
E10P02
LYWW
E10P02
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
10 AMPERES
20 VOLTS
14 m @ V
GS
= 4.5 V
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTMS10P02R2/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HDTMOS3e Single SO-8 |
| NTMS10P02R2_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET −10 Amps, −20 Volts P−Channel Enhancement−Mode |
| NTMS10P02R2G | 功能描述:MOSFET 20V 10A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS3P03R2 | 功能描述:MOSFET 30V 3.05A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS3P03R2_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -3.05 Amps, -30 Volts |
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