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參數(shù)資料
| 型號(hào)： | NTMS4107N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30V, 18A, Single N Channel, SO8(30V, 18A，功率MOSFET) |
| 中文描述： | 30V的功率MOSFET，18A條，單個(gè)N頻道，采用SO8（30V的，18A條，功率MOSFET的） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 72K |
| 代理商： | NTMS4107N |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 3
1
Publication Order Number:
NTMS4107N/D
NTMS4107N
Power MOSFET
30 V, 18 A, Single NChannel, SO8
Features
Ultra Low R
DS(on)
(at 4.5 V
GS
), Low Gate Resistance and Low Q
G
Optimized for Low Side Synchronous Applications
High Speed Switching Capability
PbFree Package is Available
Applications
Notebook Computer Vcore Applications
Network Applications
DCDC Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
V
GatetoSource Voltage
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
15
A
11
t
10 s
18
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
1.67
W
t
10 s
2.5
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
I
D
11
A
8.0
Power Dissipation
(Note 2)
T
A
= 25
°
C
P
D
0.93
W
Pulsed Drain Current
t
p
= 10 s
I
DM
56
A
Operating Junction and Storage Temperature
T
J
, T
stg
I
S
E
AS
55 to 150
°
C
Continuous Source Current (Body Diode)
3.0
A
Single Pulse DraintoSource Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V, I
PK
= 32 A,
L = 1 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
512
mJ
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
Unit
JunctiontoAmbient Steady State (Note 1)
R
JA
R
JA
R
JA
75
°
C/W
JunctiontoAmbient t
10 s (Note 1)
50
JunctiontoAmbient Steady State (Note 2)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1
″
sq. pad size
(Cu area = 1.127
″
sq. [1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412
″
sq.).
135
G
D
S
Device
Package
Shipping
ORDERING INFORMATION
NTMS4107NR2
SO8
2500/Tape & Reel
30 V
4.7 m @ 4.5 V
3.4 m @ 10 V
R
DS(on)
TYP
18 A
I
D
MAX
V
(BR)DSS
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
4
A
(Note: Microdot may be in either location)
1
8
Drain
Drain
Drain
Drain
Source
Source
Source
Gate
(Top View)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
8
http://onsemi.com
NTMS4107NR2G
SO8
(PbFree)
2500/Tape & Reel
4107N
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
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