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參數(shù)資料
| 型號： | NTMS4503N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 28V, 14A, N Channel, SOIC8(28V, 14A，功率MOSFET) |
| 中文描述： | 功率MOSFET 28V的，第14A條，?頻道，SOIC8（28V的，第14A，功率MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 134K |
| 代理商： | NTMS4503N |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 1
1
Publication Order Number:
NTMS4503N/D
NTMS4503N
Power MOSFET
28 V, 14 A, N
Channel, SOIC
8
Features
Low R
DS(on)
High Power and Current Handling Capability
Low Gate Charge
Pb
Free Package is Available
Applications
DC/DC Converters
Motor Drives
Synchronous Rectifier
POL
Buck Low
Side
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
28
V
Gate
to
Source Voltage
Continuous
V
GS
20
V
Drain Current
Continuous @ T
A
= 25
°
C (Note 1)
Continuous @ T
A
= 25
°
C (Note 2)
Continuous @ T
A
= 25
°
C (Note 3)
Single Pulse (tp = 10 s)
I
D
I
DM
14
12
9.0
40
A
Total Power Dissipation
T
A
= 25
°
C (Note 1)
T
A
= 25
°
C (Note 2)
T
A
= 25
°
C (Note 3)
P
D
2.5
1.66
0.93
W
Operating and Storage Temperature
T
J
, T
stg
55 to
150
°
C
Single Pulse Drain
to
Source Avalanche
Energy
Starting T
J
= 25
°
C
(V
DD
= 30 V, V
GS
= 10 V, I
L
= 12.2 A,
L = 1.0 mH, R
G
= 25 )
E
AS
75
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Rating
Symbol
Value
Unit
Thermal Resistance
Junction
to
Ambient (Note 1)
Junction
to
Ambient (Note 2)
Junction
to
Ambient (Note 3)
R
JA
50
75
135
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in sq), t < 10 s.
2. Surface
mounted on FR4 board using 1
″
pad size
(Cu area 1.127 in sq) steady state.
3. Surface
mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in sq), steady state.
G
D
S
Device
Package
Shipping
ORDERING INFORMATION
NTMS4503NR2
SOIC
8
2500/Tape & Reel
http://onsemi.com
28 V
8.8 m @ 4.5 V
7.0 m @ 10 V
R
DS(on)
Typ
14 A
I
D
Max
(Note 1)
V
(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOIC
8
CASE 751
STYLE 12
MARKING DIAGRAM &
PIN ASSIGNMENT
4503N = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= Pb
Free Package
4503N
AYWW
1
8
S
S
S
G
D
D
D
D
(Note: Microdot may be in either location)
1
8
NTMS4503NR2G
SOIC
8
(Pb
Free)
2500/Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTMS4503NR2 | 功能描述:MOSFET 28V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4503NR2G | 功能描述:MOSFET 28V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4503NSR2G | 制造商:ON Semiconductor 功能描述:NFET SO8 28V 14A 7MOHM - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NFET S08 28V 14A 7MOHM |
| NTMS4700NR2 | 功能描述:MOSFET 30V 14.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4700NR2G | 功能描述:MOSFET 30V 14.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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