參數(shù)資料
型號(hào)： NTMSD2P102LR2
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： Power MOSFET and Schottky Diode Dual SO-8 Package(雙通道，SO-8封裝的功率MOSFET與肖特基二極管)
中文描述： 2300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： CASE 751-07, SOIC-8
文件頁數(shù)： 1/10頁
文件大?。?/td> 113K
代理商： NTMSD2P102LR2
Semiconductor Components Industries, LLC, 2004
April, 2004 Rev. 1
1
Publication Order Number:
NTMSD2P102LR2/D
NTMSD2P102LR2
FETKY
Power MOSFET and Schottky Diode
Dual SO8 Package
Features
High Efficiency Components in a Single SO8 Package
High Density Power MOSFET with Low R
DS(on)
,
Schottky Diode with Low V
F
Logic Level Gate Drive
Independent PinOuts for MOSFET and Schottky Die
Allowing for Flexibility in Application Use
Less Component Placement for Board Space Savings
SO8 Surface Mount Package,
Mounting Information for SO8 Package Provided
Applications
Power Management in Portable and BatteryPowered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MOSFET MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Thermal Resistance JunctiontoAmbient
(Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 100
°
C
Pulsed Drain Current (Note 4)
Thermal Resistance JunctiontoAmbient
(Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 100
°
C
Pulsed Drain Current (Note 4)
Thermal Resistance JunctiontoAmbient
(Note 3)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 100
°
C
Pulsed Drain Current (Note 4)
Operating and Storage
Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 20 Vdc, V
GS
= 4.5 Vdc, Peak I
L
= 5.0 Apk, L = 28 mH, R
G
= 25
)
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. Minimum FR4 or G10 PCB, Steady State.
2. Mounted onto a 2
″
square FR4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single
sided), Steady State.
3. Mounted onto a 2
″
square FR4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single
sided), t
≤
10 seconds.
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
V
DSS
V
GS
20
10
V
V
R
θ
JA
P
D
I
D
I
D
I
DM
175
0.71
2.3
1.45
9.0
°
C/W
W
A
A
A
R
θ
JA
P
D
I
D
I
D
I
DM
105
1.19
2.97
1.88
12
°
C/W
W
A
A
A
R
θ
JA
P
D
I
D
I
D
I
DM
T
J
, T
stg
62.5
2.0
3.85
2.43
15
55 to
+150
350
°
C/W
W
A
A
A
°
C
E
AS
mJ
T
L
260
°
C
Device
Package
Shipping
ORDERING INFORMATION
NTMSD2P102LR2
SO8
2500/Tape & Reel
SO8
CASE 751
STYLE 18
2
Anode
Anode
Source
Gate
3
4
1
7
6
5
8
Cathode
Cathode
Drain
Drain
(Top View)
MARKING DIAGRAM
& PIN ASSIGNMENTS
E2P102
LYWW
E2P102 = Device Code
L
= Assembly Location
Y
= Year
WW
= Work Week
1
2
3
4
8
7
6
5
A
A
S
G
C
C
D
D
TOP VIEW
MOSFET
2.3 AMPERES
20 VOLTS
90 m @ V
GS
= 4.5 V
SCHOTTKY DIODE
2.0 AMPERES
20 VOLTS
580 mV @ I
F
= 2.0 A
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
8
相關(guān)PDF資料
PDF描述
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NTMSD3P303R2 P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package(雙P通道，增強(qiáng)模式，SO-8封裝的功率MOSFET與肖特基二極管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTMSD2P102LR2/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FETKY?
NTMSD2P102LR2_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NTMSD2P102LR2
NTMSD2P102LR2G 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMSD2P102R2 功能描述:MOSFET P-CH 20V 2.3A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
NTMSD2P102R2SG 功能描述:MOSFET FETKY 20V.150R LL TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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