參數(shù)資料
型號(hào): NTP22N06
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET 22 Amps, 60 Volts(22A,60V 的功率MOSFET)
中文描述: 22 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 71K
代理商: NTP22N06
Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 1
1
Publication Order Number:
NTP22N06/D
NTP22N06, NTB22N06
Power MOSFET
22 Amps, 60 Volts
N–Channel TO–220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (R
GS
= 10 M
)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (t
p
Drain Current
– Continuous @ T
A
= 25
°
C
– Continuous @ T
A
= 100
°
C
– Single Pulse (t
p
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Operating and Storage Temperature Range
V
DSS
V
DGR
60
60
Vdc
Vdc
Vdc
10 ms)
V
GS
V
GS
20
30
10
μ
s)
I
D
I
D
I
DM
P
D
22
10
66
60
0.4
Adc
Apk
W
W/
°
C
°
C
T
J
, T
stg
–55 to
+175
72
Single Pulse Drain–to–Source Avalanche
Energy – Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc, L = 1.0 mH,
V
DS
= 60 Vdc, I
L(pk)
= 12 A, RG = 25
)
E
AS
mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
R
θ
JC
R
θ
JA
2.5
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
T
L
260
°
C
NTx22N06
LLYWW
NTx22N06
LLYWW
22 AMPERES
60 VOLTS
R
DS(on)
= 60 m
Device
Package
Shipping
ORDERING INFORMATION
NTP22N06
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx22N06
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D
2
PAK
CASE 418B
STYLE 2
4
NTB22N06
D
2
PAK
50 Units/Rail
NTB22N06T4
D
2
PAK
800/Tape & Reel
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