參數(shù)資料
型號： NTP27N06
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： LASER MOD 670NM .95MW MVP ROUND
中文描述： 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 1/12頁
文件大?。?/td> 83K
代理商： NTP27N06
Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 2
1
Publication Order Number:
NTP27N06/D
NTP27N06, NTB27N06
Power MOSFET
27 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower VDS(on)
Lower Capacitances
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
60
Vdc
Drain–to–Gate Voltage (RGS = 10 M
)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp
60
Vdc
10 ms)
VGS
VGS
20
30
Vdc
Drain Current
– Continuous @ TA = 25
°
C
– Continuous @ TA 100
°
C
– Single Pulse (tp
Total Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
10
μ
s)
ID
ID
IDM
PD
27
15
80
Adc
Apk
88.2
0.59
W
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–55 to
+175
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 50 Vdc, VGS = 10 Vdc,
L = 0.3 mH, IL(pk) = 27 A,VDS = 60 Vdc)
Thermal Resistance – Junction–to–Case
EAS
109
mJ
R
θ
JC
TL
1.7
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
260
°
C
27 AMPERES
60 VOLTS
RDS(on) = 46 m
Device
Package
Shipping
ORDERING INFORMATION
NTP27N06
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx27N06
x
LL
Y
WW
= Device Code
= B or P
= Location Code
= Year
= Work Week
NTx27N06
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx27N06
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D2PAK
CASE 418B
STYLE 2
4
NTB27N06
D2PAK
50 Units/Rail
NTB27N06T4
D2PAK
800/Tape & Reel
相關(guān)PDF資料
PDF描述
NTB27N06 LASER MOD 635NM .6MW VAR FOCUS
NTB27N06T4 LASER MOD 635NM 4.9MW VHK ROUND
NTP30N06L Power MOSFET 30 Amps, 60 Volts, Logic Level N–Channel TO–220(30A,60V邏輯電平,N通道,TO-220封裝的功率MOSFE)
NTP30N06 Power MOSFET 30 Amps, 60 Volts N–Channel TO–220(30A, 60 V，N通道，TO-220封裝的功率MOSFET)
NTP30N20 Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode TO-220(30A,200V,N通道,增強模式,TO-220封裝的功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTP27N06/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 27 Amps， 60 Volts
NTP27N06G 功能描述:MOSFET 60V 27A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTP27N06L 功能描述:MOSFET N-CH 60V 27A TO220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
NTP2955 功能描述:MOSFET -60V -12A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTP2955G 功能描述:MOSFET -60V -12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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