- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363713 > NTP30N06 (ON SEMICONDUCTOR) Power MOSFET 30 Amps, 60 Volts N–Channel TO–220(30A, 60 V，N通道，TO-220封裝的功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | NTP30N06 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 30 Amps, 60 Volts N–Channel TO–220(30A, 60 V，N通道，TO-220封裝的功率MOSFET) |
| 中文描述： | 27 A, 60 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 60K |
| 代理商： | NTP30N06 |
Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 0
1
Publication Order Number:
NTP30N06/D
NTP30N06, NTB30N06
Power MOSFET
30 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 M
)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp
Drain Current
– Continuous @ TA = 25
°
C
– Continuous @ TA = 100
°
C
– Single Pulse (tp
Total Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
Operating and Storage Temperature Range
VDSS
VDGR
60
60
Vdc
Vdc
Vdc
10 ms)
VGS
VGS
20
30
10
μ
s)
ID
ID
IDM
PD
27
15
80
88.2
0.59
–55 to
+175
101
Adc
Apk
W
W/
°
C
°
C
TJ, Tstg
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 26 A, VDS = 60 Vdc)
Thermal Resistance
– Junction–to–Case
EAS
mJ
R
θ
JC
TL
1.7
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
260
°
C
30 AMPERES
60 VOLTS
RDS(on) = 42 m
Device
Package
Shipping
ORDERING INFORMATION
NTP30N06
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx30N06
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
NTx30N06
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx30N06
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D2PAK
CASE 418B
STYLE 2
4
NTB30N06
D2PAK
50 Units/Rail
NTB30N06T4
D2PAK
800/Tape & Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTP30N20 | Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode TO-220(30A,200V,N通道,增強(qiáng)模式,TO-220封裝的功率MOSFET) |
| NTP35N15 | Power MOSFET 37 Amps, 150 Volts |
| NTP45N06L | Power MOSFET 45 Amps, 60 Volts(45A，60V功率MOSFET) |
| NTP60N06L | Power MOSFET 60 Amps, 60 Volts, Logic Level(60A,60V,N通道,TO-220封裝的功率MOSFET) |
| NTP65N02 | Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTP30N06L | 功能描述:MOSFET NFET 60V 30A LL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP30N06LG | 功能描述:MOSFET NFET 60V 30A LL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP30N20 | 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP30N20G | 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTP335M10TRA(300)F | 制造商:NIC Components Corp 功能描述:- Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。