參數資料
型號: NTP35N15
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET 37 Amps, 150 Volts
中文描述: 37 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: CASE 221A-09, TO-220, 3 PIN
文件頁數: 1/8頁
文件大小: 73K
代理商: NTP35N15
Semiconductor Components Industries, LLC, 2003
December, 2003 Rev. 2
1
Publication Order Number:
NTP35N15/D
NTP35N15
Preferred Device
Power MOSFET
37 Amps, 150 Volts
NChannel TO220
Features
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
I
DSS
and R
DS(on)
Specified at Elevated Temperature
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
150
Vdc
DraintoSource Voltage (R
GS
= 1.0 M
)
V
DGR
150
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
10 ms)
V
GS
V
GSM
20
40
Vdc
Drain Current
Continuous @ T
A
25
°
C
Continuous @ T
A
100
°
C
Pulsed (Note 1.)
I
D
I
D
I
DM
37
23
111
Adc
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
178
1.43
W
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+150
°
C
Single DraintoSource Avalanche Energy
Starting T
J
= 25
°
C
(V
DD
= 100 Vdc, V
GS
= 10 Vdc,
I
L
(pk) = 21.6 A, L = 3.0 mH, R
G
= 25
)
E
AS
700
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
R
θ
JC
R
θ
JA
0.7
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
1. Pulse Test: Pulse Width = 10
μ
s, Duty Cycle = 2%.
T
L
260
°
C
37 AMPERES
150 VOLTS
50 m
@ V
GS
= 10 V
Device
Package
Shipping
ORDERING INFORMATION
NTP35N15
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
12
3
4
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
NTP35N15 = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
NTP35N15
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
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