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參數(shù)資料
| 型號： | NTB27N06T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | LASER MOD 635NM 4.9MW VHK ROUND |
| 中文描述： | 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 83K |
| 代理商： | NTB27N06T4 |
Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 2
1
Publication Order Number:
NTP27N06/D
NTP27N06, NTB27N06
Power MOSFET
27 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower VDS(on)
Lower Capacitances
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
60
Vdc
Drain–to–Gate Voltage (RGS = 10 M
)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp
60
Vdc
10 ms)
VGS
VGS
20
30
Vdc
Drain Current
– Continuous @ TA = 25
°
C
– Continuous @ TA 100
°
C
– Single Pulse (tp
Total Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
10
μ
s)
ID
ID
IDM
PD
27
15
80
Adc
Apk
88.2
0.59
W
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–55 to
+175
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 50 Vdc, VGS = 10 Vdc,
L = 0.3 mH, IL(pk) = 27 A,VDS = 60 Vdc)
Thermal Resistance – Junction–to–Case
EAS
109
mJ
R
θ
JC
TL
1.7
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
260
°
C
27 AMPERES
60 VOLTS
RDS(on) = 46 m
Device
Package
Shipping
ORDERING INFORMATION
NTP27N06
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx27N06
x
LL
Y
WW
= Device Code
= B or P
= Location Code
= Year
= Work Week
NTx27N06
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx27N06
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D2PAK
CASE 418B
STYLE 2
4
NTB27N06
D2PAK
50 Units/Rail
NTB27N06T4
D2PAK
800/Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NTB30N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:Power MOSFET 30Amps, 60 Volts, N-Channel TO-220 |
| NTB30N06G | 功能描述:MOSFET NFET 60V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB30N06L | 功能描述:MOSFET 60V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB30N06LG | 功能描述:MOSFET 60V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB30N06LT4 | 功能描述:MOSFET 60V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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