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參數資料
| 型號： | NTMSD3P303R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package(雙P通道，增強模式，SO-8封裝的功率MOSFET與肖特基二極管) |
| 中文描述： | 2340 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 751-07, SO-8 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 119K |
| 代理商： | NTMSD3P303R2 |
Semiconductor Components Industries, LLC, 2003
December, 2003 Rev. 1
1
Publication Order Number:
NTMSD3P303R2/D
NTMSD3P303R2
FETKY
PChannel EnhancementMode
Power MOSFET and Schottky Diode
Dual SO8 Package
Features
High Efficiency Components in a Single SO8 Package
High Density Power MOSFET with Low R
DS(on)
,
Schottky Diode with Low V
F
Independent PinOuts for MOSFET and Schottky Die
Allowing for Flexibility in Application Use
Less Component Placement for Board Space Savings
SO8 Surface Mount Package,
Mounting Information for SO8 Package Provided
Applications
DCDC Converters
Low Voltage Motor Control
Power Management in Portable and BatteryPowered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MOSFET MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Thermal Resistance
JunctiontoAmbient (Note 1.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 70
°
C
Pulsed Drain Current (Note 4.)
Thermal Resistance
JunctiontoAmbient (Note 2.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 70
°
C
Pulsed Drain Current (Note 4.)
Thermal Resistance
JunctiontoAmbient (Note 3.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 70
°
C
Pulsed Drain Current (Note 4.)
Operating and Storage
Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C (V
DD
=
30 Vdc, V
GS
= 4.5 Vdc, Peak I
L
=
7.5 Apk, L = 5 mH, R
G
= 25
)
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. Minimum FR4 or G10 PCB, Steady State.
2. Mounted onto a 2
″
square FR4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single sided),
Steady State.
3. Mounted onto a 2
″
square FR4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single sided),
t
≤
10 seconds.
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
V
DSS
V
GS
30
20
V
V
R
θ
JA
P
D
I
D
I
D
I
DM
171
0.73
2.34
1.87
8.0
°
C/W
W
A
A
A
R
θ
JA
P
D
I
D
I
D
I
DM
100
1.25
3.05
2.44
12
°
C/W
W
A
A
A
R
θ
JA
P
D
I
D
I
D
I
DM
T
J
, T
stg
62.5
2.0
3.86
3.10
15
55 to
+150
140
°
C/W
W
A
A
A
°
C
E
AS
mJ
T
L
260
°
C
Device
Package
Shipping
ORDERING INFORMATION
NTMSD3P303R2
SO8
2500/Tape & Reel
SO8
CASE 751
STYLE 18
1
8
2
Anode
Anode
Source
Gate
3
4
1
7
6
5
8
Cathode
Cathode
Drain
Drain
(Top View)
MARKING DIAGRAM
& PIN ASSIGNMENTS
E3P303
LYWW
E3P303 = Device Code
L
= Assembly Location
Y
= Year
WW
= Work Week
1
2
3
4
8
7
6
5
A
A
S
G
C
C
D
D
(TOP VIEW)
MOSFET
3.05 AMPERES
30 VOLTS
0.085 @ V
GS
= 10 V
SCHOTTKY DIODE
3.0 AMPERES
30 VOLTS
420 mV @ I
F
= 3.0 A
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTMSD3P303R2/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:FETKY? |
| NTMSD3P303R2_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
| NTMSD3P303R2G | 功能描述:MOSFET -30V -3.05A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMSD6N303 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTMSD6N303R2 | 功能描述:MOSFET 30V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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