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參數(shù)資料
| 型號： | NTMSD6N303R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 6 Amps, 30 Volts(6A,30V 的功率MOSFET) |
| 中文描述： | 6 A, 30 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-07, SOIC-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 140K |
| 代理商： | NTMSD6N303R2 |
Semiconductor Components Industries, LLC, 2003
December, 2003 Rev. 1
1
Publication Order Number:
NTMSD6N303R2/D
NTMSD6N303R2
Power MOSFET
6 Amps, 30 Volts
NChannel SO8 FETKY
The FETKY product family incorporates low R
DS(on)
MOSFETs
packaged with an industry leading, low forward drop, low leakage
Schottky Barrier rectifier to offer high efficiency components in a
space saving configuration. Independent pinouts for MOSFET and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
Applications
Buck Converter
BuckBoost
Synchronous Rectification
Low Voltage Motor Control
Battery Packs
Chargers
Cell Phones
MOSFET MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted) (Note 1)
Rating
Symbol
Value
Unit
DraintoSource Voltage
DraintoGate Voltage (R
GS
= 1.0 M )
GatetoSource Voltage Continuous
Drain Current (Note 2)
Continuous @ T
A
= 25
°
C
Single Pulse (tp
≤
10 s)
Total Power Dissipation @ T
A
= 25
°
C
(Note 2)
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 30 Vdc, V
GS
= 5.0 Vdc,
V
DS
= 20 Vdc, I
L
= 9.0 Apk, L = 10 mH,
R
G
= 25
)
1. Pulse Test: Pulse Width
≤
250 s, Duty Cycle
≤
2.0%.
2. Mounted on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided),
10 sec. max.
V
DSS
V
DGR
V
GS
30
30
20
Vdc
Vdc
Vdc
I
D
I
DM
P
D
6.0
30
2.0
Adc
Apk
Watts
E
AS
325
mJ
Device
Package
Shipping
ORDERING INFORMATION
NTMSD6N303R2
SO8
2500/Tape & Reel
SO8
CASE 751
STYLE 18
1
8
2
Anode
Anode
Source
Gate
3
4
1
7
6
5
8
Cathode
Cathode
Drain
Drain
(Top View)
MARKING DIAGRAM
& PIN ASSIGNMENTS
E6N303
LYWW
E6N303 = Device Code
L
= Assembly Location
Y
= Year
WW
= Work Week
1
2
3
4
8
7
6
5
A
A
S
G
C
C
D
D
(TOP VIEW)
MOSFET
6.0 AMPERES
30 VOLTS
24 m @ V
GS
= 10 V (Typ)
SCHOTTKY DIODE
6.0 AMPERES
30 VOLTS
420 mV @ I
F
= 3.0 A
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTMSD6N303R2G | 功能描述:MOSFET 30V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMSD6N303R2SG | 功能描述:MOSFET NFET 30V 6A .024R RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTN12 | 制造商:OTAX Corporation 功能描述: |
| NTN22 | 制造商:OTAX Corporation 功能描述:Tape & Reel |
| NTN32 | 制造商:OTAX Corporation 功能描述: |
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