參數(shù)資料
型號： NTMS4N01R2
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： Power MOSFET 4.2 Amps, 20 Volts(4.2A,20V 的功率MOSFET)
中文描述： 3300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： CASE 751-07, SO-8
文件頁數(shù)： 1/8頁
文件大?。?/td> 83K
代理商： NTMS4N01R2
Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 2
1
Publication Order Number:
NTMS4N01R2/D
NTMS4N01R2
Power MOSFET
4.2 Amps, 20 Volts
N–Channel Enhancement–Mode
Single SO–8 Package
Features
High Density Power MOSFET with Ultra Low R
DS(on)
Providing
Higher Efficiency
Miniature SO–8 Surface Mount Package Saving Board Space;
Mounting Information for the SO–8 Package is Provided
I
DSS
Specified at Elevated Temperature
Drain–to–Source Avalanche Energy Specified
Diode Exhibits High Speed, Soft Recovery
Applications
Power Management in Portable and Battery–Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (R
GS
= 1.0 m )
Gate–to–Source Voltage – Continuous
Thermal Resistance –
Junction–to–Ambient (Note 1.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ 25
°
C
Continuous Drain Current @ 70
°
C
Pulsed Drain Current (Note 4.)
Thermal Resistance –
Junction–to–Ambient (Note 2.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ 25
°
C
Continuous Drain Current @ 70
°
C
Pulsed Drain Current (Note 4.)
Thermal Resistance –
Junction–to–Ambient (Note 3.)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ 25
°
C
Continuous Drain Current @ 70
°
C
Pulsed Drain Current (Note 4.)
Operating and Storage
Temperature Range
Single Pulse Drain–to–Source Avalanche
Energy – Starting T
J
= 25
°
C
(V
DD
= 20 Vdc, V
GS
= 5.0 Vdc, Peak I
L
= 7.5 Apk, L = 6 mH, R
G
= 25
)
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single
sided), t
≤
10 seconds.
2. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single
sided), t = steady state.
3. Minimum FR–4 or G–10 PCB, t = Steady State.
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
V
DSS
V
DGR
V
GS
20
20
±
10
V
V
V
R
θ
JA
P
D
I
D
I
D
I
DM
50
2.5
5.9
4.7
25
°
C/W
W
A
A
A
R
θ
JA
P
D
I
D
I
D
I
DM
100
1.25
4.2
3.3
20
°
C/W
W
A
A
A
R
θ
JA
P
D
I
D
I
D
I
DM
T
J
, T
stg
162
0.77
3.3
2.6
15
–55 to
+150
169
°
C/W
W
A
A
A
°
C
E
AS
mJ
T
L
260
°
C
Device
Package
Shipping
ORDERING INFORMATION
NTMS4N01R2
SO–8
2500/Tape & Reel
SO–8
CASE 751
STYLE 13
1
http://onsemi.com
Single N–Channel
D
S
G
8
2
N.C.
Source
Source
Gate
3
4
1
7
6
5
8
Drain
Drain
Drain
Drain
Top View
MARKING DIAGRAM
& PIN ASSIGNMENT
E
L
E4N01 = Device Code
L
= Assembly Location
Y
= Year
WW
= Work Week
4.2 AMPERES
20 VOLTS
0.045 @ V
GS
= 4.5 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTMS4N01R2/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 4.2 Amps， 20 Volts
NTMS4N01R2G 功能描述:MOSFET 20V 4.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMS4P01R2 功能描述:MOSFET P-CH 12V 3.4A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
NTMS4P01R2/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET -4.5 Amps， -12 Volts
NTMS5835NL 制造商:ON Semiconductor 功能描述:MOSFET N CH W DIO 40V 9.2A 8SO 制造商:ON Semiconductor 功能描述:MOSFET, N CH, W DIO, 40V, 9.2A, 8SO
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