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參數(shù)資料
| 型號： | NTMS4706N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30 V, 10.3 A(30V, 10.3A, 功率MOSFET) |
| 中文描述： | 功率MOSFET 30五，10.3甲（30V的，10.3A，功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 67K |
| 代理商： | NTMS4706N |
Semiconductor Components Industries, LLC, 2005
November, 2005 Rev. 3
1
Publication Order Number:
NTMS4706N/D
NTMS4706N
Power MOSFET
30 V, 10.3 A, Single NChannel, SO8
Features
Low R
DS(on)
Low Gate Charge
Standard SO8 Single Package
PbFree Package is Available
Applications
Notebooks, Graphics Cards
Synchronous Rectification
High Side Switch
DCDC Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
DraintoSource Voltage
Symbol
V
DSS
V
GS
I
D
Value
30
±
20
8.6
Unit
V
GatetoSource Voltage
Continuous Drain
Current (Note 1)
V
A
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 25
°
C
6.2
t
10 s
10.3
Power Dissipation
(Note 1)
Steady
State
P
D
1.5
W
t
10 s
2.2
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
6.4
A
4.6
Power Dissipation
(Note 2)
P
D
0.83
W
Pulsed Drain Current
t
p
= 10 s
I
DM
T
J
,
T
stg
I
S
E
AS
31
A
°
C
Operating Junction and Storage Temperature
55 to
150
Source Current (Body Diode)
2.1
A
Single Pulse DraintoSource Avalanche Energy
(V
DD
= 25 V, V
GS
= 10 V, I
L
Peak = 7.5 A,
L = 10 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
150
mJ
T
L
260
°
C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
R
JA
R
JA
R
JA
Value
83.5
Unit
°
C/W
JunctiontoAmbient – Steady State (Note 1)
JunctiontoAmbient – t
10 s (Note 1)
58
JunctiontoAmbient – Steady State (Note 2)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
150
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NTMS4706NR2
SO8
2500/Tape & Reel
V
(BR)DSS
R
DS(ON)
TYP
I
D
MAX
(Note 1)
30 V
9.0 m @ 10 V
10.3 A
NChannel
D
S
G
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
11.4 m @ 4.5 V
NTMS4706NR2G
SO8
(PbFree)
2500/Tape & Reel
4
A
4706N = Device Code
A
= Assembly Location
L
= WaferLot
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
1
8
Drain
Drain
Drain
Drain
Source
Source
Source
Gate
Top View
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| NTMS4706NR2 | 功能描述:MOSFET 30V 10.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4706NR2G | 功能描述:MOSFET 30V 10.3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4800N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 8 A, N−Channel, SOIC−8 |
| NTMS4800NR2G | 功能描述:MOSFET 30V 8A 0.020OHM N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4801N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 12 A, N−Channel, SO−8 |
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