- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363713 > NTMS4404NR2 (ON SEMICONDUCTOR) Insulation Displacement (IDC) Connector; No. of Contacts:24; Contact Termination:IDC; Gender:Male RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號(hào)： | NTMS4404NR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Insulation Displacement (IDC) Connector; No. of Contacts:24; Contact Termination:IDC; Gender:Male RoHS Compliant: Yes |
| 中文描述： | 7000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 751-07, SOP-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 73K |
| 代理商： | NTMS4404NR2 |
Semiconductor Components Industries, LLC, 2003
November, 2003 Rev. 1
1
Publication Order Number:
NTMS4404N/D
NTMS4404N
Power MOSFET
30 V, 12 A, Single NChannel, SO8
Features
High Density Power MOSFET with Ultra Low R
DS(on)
for Higher
Efficiency
Miniature SO8 Surface Mount Package Saving Board Space
I
DSS
Specified at Elevated Temperature
Diode Exhibits High Speed, Soft Recovery
Applications
Power Management for Battery Power Products
Portable Products
Computers, Printers, PCMCIA Cards
Cell Phones, Cordless Telephones
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
V
GatetoSource Voltage
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 70
°
C
T
A
= 25
°
C
9.6
7.6
12
A
tp
10 s
Power Dissipation
(Note 1)
Steady State
tp
Steady
State
P
D
1.56
2.5
W
10 s
T
A
= 25
°
C
T
A
= 70
°
C
T
A
= 25
°
C
Continuous Drain
Current (Note 2)
I
D
7.0
5.6
A
Power Dissipation
(Note 2)
P
D
0.83
W
Pulsed Drain Current
tp = 10 s, DC = 2 %
I
DM
T
J
,
T
STG
50
A
Operating Junction and Storage Temperature
55 to
150
°
C
Source Current (Body Diode)
I
S
6.0
A
Single Pulse DraintoSource Avalanche
Energy (V
DD
= 20 V, V
GS
= 5 V, I
PK
= 7.25 A,
L = 19 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
E
AS
500
mJ
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient – Steady State (Note 1)
R
JA
R
JA
R
JA
80
°
C/W
JunctiontoAmbient – t = 1 0 s (Note 1)
50
JunctiontoAmbient – Steady State (Note 2)
150
1. Surfacemounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surfacemounted on FR4 board using the minimum recommended pad
size (Cu area = 0.412 in sq.)
G
D
S
Device
Package
Shipping
ORDERING INFORMATION
NTMS4404NR2
SO8
2500/Tape & Reel
http://onsemi.com
30 V
15.5 m @ 4.5 V
9.7 m @ 10 V
R
DS(on)
TYP
12 A
I
D
MAX
V
(BR)DSS
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
E
L
E4404N= Device Code
L
= Assembly Location
Y
= Year
WW
= Work Week
1
8
Drain
Drain
Drain
Drain
Source
Source
Source
Gate
Top View
NChannel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTMS4503N | Power MOSFET 28V, 14A, N Channel, SOIC8(28V, 14A，功率MOSFET) |
| NTMS4706N | Power MOSFET 30 V, 10.3 A(30V, 10.3A, 功率MOSFET) |
| NTMS4N01R2 | Power MOSFET 4.2 Amps, 20 Volts(4.2A,20V 的功率MOSFET) |
| NTMS4P01R2 | Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement Mode Single SO-8 Package(-4.5A, -12 V，單P通道，增強(qiáng)模式，SO-8封裝的功率MOSFET) |
| NTMS5P02R2 | Power MOSFET -5.4 Amps, -20 Volts P-Channel Enhancement Mode Single SO-8 Package(-5.4A, -20 V，單P通道，增強(qiáng)模式，SO-8封裝的功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTMS4503N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET |
| NTMS4503NR2 | 功能描述:MOSFET 28V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4503NR2G | 功能描述:MOSFET 28V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMS4503NSR2G | 制造商:ON Semiconductor 功能描述:NFET SO8 28V 14A 7MOHM - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NFET S08 28V 14A 7MOHM |
| NTMS4700NR2 | 功能描述:MOSFET 30V 14.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。