參數(shù)資料
型號： NTMS3P03R2
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： Power MOSFET -3.05 Amps, -30 Volts P–Channel SO–8(-3.05 A, -30 V，P通道SO-8裝的功率MOSFET)
中文描述： 2340 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： MINIATURE, CASE 751-07, SOIC-8
文件頁數(shù)： 1/7頁
文件大?。?/td> 148K
代理商： NTMS3P03R2
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 2
1
Publication Order Number:
NTMS3P03R2/D
NTMS3P03R2
Power MOSFET
3.05 Amps, 30 Volts
P
Channel SOIC
8
Features
High Efficiency Components in a Single SOIC
8 Package
High Density Power MOSFET with Low R
DS(on)
Miniature SOIC
8 Surface Mount Package
Saves Board Space
Diode Exhibits High Speed with Soft Recovery
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for the SOIC
8 Package is Provided
Pb
Free Package is Available
Applications
DC
DC Converters
Low Voltage Motor Control
Power Management in Portable and Battery
Powered Products,
i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless
Telephones
Device
Package
Shipping
ORDERING INFORMATION
NTMS3P03R2
SOIC
8
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SOIC
8
CASE 751
STYLE 13
MARKING DIAGRAM &
PIN ASSIGNMENT
E3P03 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= Pb
Free Package
E3P03
AYWW
1
8
NC S
S
G
D
D
D
D
(Note: Microdot may be in either location)
NTMS3P03R2G
SOIC
8
(Pb
Free)
2500/Tape & Reel
2500/Tape & Reel
3.05 AMPERES
30 VOLTS
0.085 @ V
GS
=
10 V
D
S
G
P
Channel
1
8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTMS3P03R2_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -3.05 Amps, -30 Volts
NTMS3P03R2G 功能描述:MOSFET 30V 3.05A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTMS4101PR2 功能描述:MOSFET P-CH 20V 6.9A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
NTMS4107N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 18 A, Single N−Channel, SO−8
NTMS4107NR2 功能描述:MOSFET 30V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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