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參數(shù)資料
| 型號： | NTMFS4836N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30 V, 90 A(30V, 90A, 功率MOSFET) |
| 中文描述： | 功率MOSFET 30五，90甲（30V的，90A型，功率MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 76K |
| 代理商： | NTMFS4836N |
Semiconductor Components Industries, LLC, 2006
November, 2006 Rev. 3
1
Publication Order Number:
NTMFS4836N/D
NTMFS4836N
Power MOSFET
30 V, 90 A, Single NChannel, SO8 FL
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Devices
Applications
CPU Power Delivery
DCDC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
V
GatetoSource Voltage
±
20
V
Continuous Drain
Current R
JA
(Note 1)
Steady
State
T
A
= 25
°
C
18
A
T
A
= 85
°
C
13
Power Dissipation
R
JA
(Note 1)
Continuous Drain
Current R
JA
(Note 2)
T
A
= 25
°
C
P
D
2.25
W
T
A
= 25
°
C
ID
11
A
T
A
= 85
°
C
8
Power Dissipation
R
JA
(Note 2)
Continuous Drain
Current R
JC
(Note 1)
T
A
= 25
°
C
P
D
0.89
W
T
C
= 25
°
C
I
D
90
A
T
C
= 85
°
C
65
Power Dissipation
R
JC
(Note 1)
T
C
= 25
°
C
P
D
55.6
W
Pulsed Drain
Current
T
A
= 25
°
C,
t
p
= 10 s
I
DM
180
A
Operating Junction and Storage
Temperature
T
J
,
T
STG
55 to
+150
°
C
Source Current (Body Diode)
I
S
46
A
Drain to Source DV/DT
dV/dt
6
V/ns
Single Pulse DraintoSource Avalanche
Energy (T
J
= 25
°
C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 22 A
pk
, L = 1.0 mH, R
G
= 25
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
242
mJ
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
A
Y
WW
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
30 V
4.0 m @ 10 V
90 A
6.0 m @ 4.5 V
G (4)
S (1,2,3)
NCHANNEL MOSFET
D (5,6)
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4836NT1G
SO8 FL
(PbFree)
1500 /
Tape & Reel
NTMFS4836NT3G
SO8 FL
(PbFree)
5000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
1
4836N
AYWW
S
S
S
G
D
D
D
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