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參數(shù)資料
| 型號： | NTMFS4709N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30V, 94A, Single N Channel, SOIC8 FL(30V, 94A，功率MOSFET) |
| 中文描述： | 30V的功率MOSFET，94A章，單N通道，SOIC8佛羅里達州（30V的，94A章，功率MOSFET的） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 137K |
| 代理商： | NTMFS4709N |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 2
1
Publication Order Number:
NTMFS4709N/D
NTMFS4709N
Power MOSFET
30 V, 94 A, Single N
Channel, SOIC
8 FL
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb
Free Devices
Applications
VCORE Applications
DC
DC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
=25
°
C unless otherwise stated)
Rating
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
V
GS
I
D
30
V
Gate
to
Source Voltage
±
20
V
Continuous Drain
Current R
JA
(Note 1)
Steady
State
T
A
= 25
°
C
18
A
T
A
= 85
°
C
13
Power Dissipation
R
JA
(Note 1)
T
A
= 25
°
C
P
D
2.35
W
Continuous Drain
Current R
JA
(Note 2)
T
A
= 25
°
C
I
D
11
A
T
A
= 85
°
C
8.0
Power Dissipation
R
JA
(Note 2)
T
A
= 25
°
C
P
D
0.91
W
Continuous Drain
Current R
JC
(Note 1)
T
C
= 25
°
C
I
D
94
A
T
C
= 85
°
C
68
Power Dissipation
R
JC
(Note 1)
T
C
= 25
°
C
P
D
62.5
W
Pulsed Drain Cur-
rent
T
A
= 25
°
C,
t
p
= 10 s
T
A
= 25
°
C
I
DM
140
A
Current limited by
package
I
DmaxPkg
140
A
Operating Junction and
Storage Temperature
T
J
,
T
STG
I
S
dV/dt
55 to
+150
°
C
Source Current (Body Diode)
62.5
A
Drain to Source
10
V/ns
Single Pulse Drain
to
Source Avalanche
Energy T
J
= 25
°
C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 30 A
pk
, L = 1.0 mH, R
G
= 25
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
E
AS
450
mJ
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using 1 sq
in pad, 1 oz Cu.
2. Surface
mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4709NT1G SOIC
8 FL
(Pb
Free)
1500 / Tape & Reel
SOIC
8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
1
4709N
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb
Free Package
4709N
AYWW
S
S
S
G
N
Channel
D
S
G
30 V
4.0 m @ 4.5 V
2.85 m @ 10 V
R
DS(on)
Typ
94 A
I
D
Max
V
(BR)DSS
D
D
D
D
NTMFS4709NT3G
5000 / Tape & Reel
SOIC
8 FL
(Pb
Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTMFS4709NT1G | 制造商:ON Semiconductor 功能描述: |
| NTMFS4709NT3G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL |
| NTMFS4741NT1G | 制造商:ON Semiconductor 功能描述: |
| NTMFS4744N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL |
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