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| 型號： | NTMFS4708N |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET 30 V, 19 A(30V, 19A, 功率MOSFET) |
| 中文描述： | 7800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | CASE 488AA-01, SO-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 145K |
| 代理商： | NTMFS4708N |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 1
1
Publication Order Number:
NTMFS4708N/D
NTMFS4708N
Power MOSFET
30 V, 19 A, Single N
Channel, SOIC
8 FL
Features
Fast Switching Times
Low Gate Charge
Low R
DS(on)
Low Inductance SOIC
8 Package
These are Pb
Free Devices
Applications
Notebooks, Graphics Cards
DC
DC Converters
Synchronous Rectification
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
V
GS
I
D
30
V
Gate
to
Source Voltage
±
20
V
Continuous Drain Current
(Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 25
°
C
11.5
A
8.0
t
≤
10 s
19
Power Dissipation
(Note 1)
Steady
State
P
D
2.2
W
t
≤
10 s
6.25
Continuous Drain Current
(Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
7.8
A
5.6
Power Dissipation
(Note 2)
P
D
1.0
W
Pulsed Drain Current
t
p
≤
10 s
I
DM
T
J
,
T
STG
58
A
Operating Junction and Storage Temperature
55 to
150
°
C
Source Current (Body Diode)
I
S
6.25
A
Single Pulse Drain
to
Source Avalanche
Energy. V
DD
= 25 V, V
GS
= 10 V, I
PK
= 7.0 A,
L = 10 mH, R
G
= 25
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
E
AS
245
mJ
T
L
260
°
C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction
to
Ambient – Steady State (Note 1)
R
JA
R
JA
R
JA
56.5
°
C/W
Junction
to
Ambient – t
≤
10 s (Note 1)
20
Junction
to
Ambient – Steady State (Note 2)
124
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface
mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4708NT1G SOIC
8 FL
(Pb
Free)
1500 / Tape & Reel
SOIC
8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
1
4708N
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb
Free Package
4708N
AYWW
S
S
S
G
N
Channel
D
S
G
30 V
10.1 m @ 4.5 V
7.3 m @ 10 V
R
DS(on)
Typ
19 A
I
D
Max
V
(BR)DSS
D
D
D
D
NTMFS4708NT3G
5000 / Tape & Reel
SOIC
8 FL
(Pb
Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTMFS4708NT1G | 功能描述:MOSFET 30V 19A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4708NT3G | 功能描述:MOSFET 30V 19A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMFS4709N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL |
| NTMFS4709NT1G | 制造商:ON Semiconductor 功能描述: |
| NTMFS4709NT3G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL |
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